JPS5728372A - Manufacture of semiconductor light emitting device - Google Patents

Manufacture of semiconductor light emitting device

Info

Publication number
JPS5728372A
JPS5728372A JP10303380A JP10303380A JPS5728372A JP S5728372 A JPS5728372 A JP S5728372A JP 10303380 A JP10303380 A JP 10303380A JP 10303380 A JP10303380 A JP 10303380A JP S5728372 A JPS5728372 A JP S5728372A
Authority
JP
Japan
Prior art keywords
layer
substrate
grown
type
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10303380A
Other languages
Japanese (ja)
Inventor
Shigenobu Yamagoshi
Tomonobu Sugawara
Masayuki Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10303380A priority Critical patent/JPS5728372A/en
Publication of JPS5728372A publication Critical patent/JPS5728372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain the device emitting light at the substrate side while eliminating the need for a buffer layer, and to simplify structure by a method wherein the surface of the substrate is etched, and a direct carrier confining layer, an energy gap thereof is larger than the substrate, is grown on the surface. CONSTITUTION:When the carrier confining layer is grown in an epitaxial shape through a gaseous-phase reaction, HCl gas is worked on the surface of the N type GaAs substrate 1 first and the surface is etched, and a surface transforming layer generated during heating in a reaction chamber is removed previously. The gas is changed into H2, AsCl3, AlCl3, etc., and the P type CaAlAs carrier confining layer 3 is grown on the exposed surface 2. When the confining layer is grown in a liquid phase, a Ga solution in which N type GaAs is saturated is worked to the substrate 1, a transformed layer formed on the surface is melted back, the solution is changed into a Ga solution in which P type GaAlAs is supersaturated, and the P type GaAl As layer 3 is grown. An electrode 4 is attached to one part of the surface of the layer 3 and an electrode 5 collectively to the back of the substrate 1 respectively.
JP10303380A 1980-07-29 1980-07-29 Manufacture of semiconductor light emitting device Pending JPS5728372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10303380A JPS5728372A (en) 1980-07-29 1980-07-29 Manufacture of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10303380A JPS5728372A (en) 1980-07-29 1980-07-29 Manufacture of semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5728372A true JPS5728372A (en) 1982-02-16

Family

ID=14343339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10303380A Pending JPS5728372A (en) 1980-07-29 1980-07-29 Manufacture of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5728372A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154123A (en) * 1984-12-27 1986-07-12 Showa Denko Kk Liquid-phase epitaxial growth method
JPS63123835A (en) * 1987-10-22 1988-05-27 Union:Kk Glass bead of high refractive index

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154123A (en) * 1984-12-27 1986-07-12 Showa Denko Kk Liquid-phase epitaxial growth method
JPS63123835A (en) * 1987-10-22 1988-05-27 Union:Kk Glass bead of high refractive index

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