JPS5443186A - Liquid phase epitaxial growth method - Google Patents

Liquid phase epitaxial growth method

Info

Publication number
JPS5443186A
JPS5443186A JP11014277A JP11014277A JPS5443186A JP S5443186 A JPS5443186 A JP S5443186A JP 11014277 A JP11014277 A JP 11014277A JP 11014277 A JP11014277 A JP 11014277A JP S5443186 A JPS5443186 A JP S5443186A
Authority
JP
Japan
Prior art keywords
liq
iiiwv
crystal substrate
epitaxial growth
gas atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11014277A
Other languages
Japanese (ja)
Other versions
JPS5617320B2 (en
Inventor
Takashi Fukui
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11014277A priority Critical patent/JPS5443186A/en
Publication of JPS5443186A publication Critical patent/JPS5443186A/en
Publication of JPS5617320B2 publication Critical patent/JPS5617320B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow IIIWV group cpd. semiconductor layer of excellent crystallizability and with good reproducibility without causing unevenness on the surface, by liq.- phae epitaxial growth of IIIWV group cpd. semiconductor layer on an InP crystal substrate in H2 gas atmosphere contg. trimethyl or triethyl phosphorus.
CONSTITUTION: Liq. phase epitaxial growth of IIIWV group cpd., e.g., InP, In1-xGaxAs1-yPy (0≤x<1.0≤y<1) semicondutor is effected on an InP crystal substrate in H2 gas atmosphere contg. (CH3)3P or (C2H5)3P. Hereby, at the temp. the above-mentioned liq. phase epitaxia growth is effecte, these org. phosphorus cpds. are thermally dissociated to produce partical press. of P vapor in H2 gas atmosphere, so that evaporation of P from InP crystal substrate and from molten liq. contg. P is restrained. Consequently, flat layer of IIIWV group cpd. semiconductor can be epitaxially grown in liq. phase with good reproduciblity on a smooth InP crystal substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP11014277A 1977-09-13 1977-09-13 Liquid phase epitaxial growth method Granted JPS5443186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11014277A JPS5443186A (en) 1977-09-13 1977-09-13 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11014277A JPS5443186A (en) 1977-09-13 1977-09-13 Liquid phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS5443186A true JPS5443186A (en) 1979-04-05
JPS5617320B2 JPS5617320B2 (en) 1981-04-21

Family

ID=14528091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11014277A Granted JPS5443186A (en) 1977-09-13 1977-09-13 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5443186A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023021U (en) * 1988-06-18 1990-01-10

Also Published As

Publication number Publication date
JPS5617320B2 (en) 1981-04-21

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