JPS5443186A - Liquid phase epitaxial growth method - Google Patents
Liquid phase epitaxial growth methodInfo
- Publication number
- JPS5443186A JPS5443186A JP11014277A JP11014277A JPS5443186A JP S5443186 A JPS5443186 A JP S5443186A JP 11014277 A JP11014277 A JP 11014277A JP 11014277 A JP11014277 A JP 11014277A JP S5443186 A JPS5443186 A JP S5443186A
- Authority
- JP
- Japan
- Prior art keywords
- liq
- iiiwv
- crystal substrate
- epitaxial growth
- gas atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To grow IIIWV group cpd. semiconductor layer of excellent crystallizability and with good reproducibility without causing unevenness on the surface, by liq.- phae epitaxial growth of IIIWV group cpd. semiconductor layer on an InP crystal substrate in H2 gas atmosphere contg. trimethyl or triethyl phosphorus.
CONSTITUTION: Liq. phase epitaxial growth of IIIWV group cpd., e.g., InP, In1-xGaxAs1-yPy (0≤x<1.0≤y<1) semicondutor is effected on an InP crystal substrate in H2 gas atmosphere contg. (CH3)3P or (C2H5)3P. Hereby, at the temp. the above-mentioned liq. phase epitaxia growth is effecte, these org. phosphorus cpds. are thermally dissociated to produce partical press. of P vapor in H2 gas atmosphere, so that evaporation of P from InP crystal substrate and from molten liq. contg. P is restrained. Consequently, flat layer of IIIWV group cpd. semiconductor can be epitaxially grown in liq. phase with good reproduciblity on a smooth InP crystal substrate.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11014277A JPS5443186A (en) | 1977-09-13 | 1977-09-13 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11014277A JPS5443186A (en) | 1977-09-13 | 1977-09-13 | Liquid phase epitaxial growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5443186A true JPS5443186A (en) | 1979-04-05 |
JPS5617320B2 JPS5617320B2 (en) | 1981-04-21 |
Family
ID=14528091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11014277A Granted JPS5443186A (en) | 1977-09-13 | 1977-09-13 | Liquid phase epitaxial growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5443186A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH023021U (en) * | 1988-06-18 | 1990-01-10 |
-
1977
- 1977-09-13 JP JP11014277A patent/JPS5443186A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5617320B2 (en) | 1981-04-21 |
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