JPS5637685A - Manufacture of light emission diode - Google Patents
Manufacture of light emission diodeInfo
- Publication number
- JPS5637685A JPS5637685A JP11382779A JP11382779A JPS5637685A JP S5637685 A JPS5637685 A JP S5637685A JP 11382779 A JP11382779 A JP 11382779A JP 11382779 A JP11382779 A JP 11382779A JP S5637685 A JPS5637685 A JP S5637685A
- Authority
- JP
- Japan
- Prior art keywords
- type
- light emission
- added
- segregation
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 238000005204 segregation Methods 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To obtain a sufficient and low density N type layer in a light emission diode without inverting to P type by forming an N type epitaxial layer using a growing solution added with doner impurity reducing segregation as becoming lower temperature. CONSTITUTION:S and Sn are added to growing solution, and an N type layer 2 is epitaxially grown in liquid phase on an N type GaP substrate 1. Sn is so-called double polarity impurity for GaP crystal, but becomes P type at 1,000-900 deg.C mostly, and forms N type GaP as a whole. The lower the temperature becomes, the lower the segregation coefficiency of the Sn is contrary to the S. When the Sn is added thus into the growing solution, the P type inversion at the initial time of growing can be suppressed, and an N type layer having considerably low carrier density can be obtained ven in the vicinity of the junction. Other doner impurity for reducing the segregation coefficient instead of the Sn similarly as the temperature becomes lower may be employed. Thus, a diode having a preferable light emission efficiency can be manufactured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11382779A JPS5637685A (en) | 1979-09-04 | 1979-09-04 | Manufacture of light emission diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11382779A JPS5637685A (en) | 1979-09-04 | 1979-09-04 | Manufacture of light emission diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5637685A true JPS5637685A (en) | 1981-04-11 |
Family
ID=14622032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11382779A Pending JPS5637685A (en) | 1979-09-04 | 1979-09-04 | Manufacture of light emission diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637685A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4938867A (en) * | 1972-08-17 | 1974-04-11 | ||
| JPS542660A (en) * | 1977-06-08 | 1979-01-10 | Sanyo Electric Co Ltd | Liquid-phase epitaxial growth method of compound semiconductor |
-
1979
- 1979-09-04 JP JP11382779A patent/JPS5637685A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4938867A (en) * | 1972-08-17 | 1974-04-11 | ||
| JPS542660A (en) * | 1977-06-08 | 1979-01-10 | Sanyo Electric Co Ltd | Liquid-phase epitaxial growth method of compound semiconductor |
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