JPS57139970A - Diode - Google Patents
DiodeInfo
- Publication number
- JPS57139970A JPS57139970A JP2519881A JP2519881A JPS57139970A JP S57139970 A JPS57139970 A JP S57139970A JP 2519881 A JP2519881 A JP 2519881A JP 2519881 A JP2519881 A JP 2519881A JP S57139970 A JPS57139970 A JP S57139970A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- diode
- withstand voltage
- leak current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000011084 recovery Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To stabilize withstand voltage and reduce leak current in a diode provided with a P<+> layer and N<+> layer mosaically arranged on a P<-> layer covering an N<+> substrate by a method wherein a P<-> layer is formed in an N<-> type layer epitaxially grown on the N<+> substrate. CONSTITUTION:A low concentration N<-> layer 17 is formed on a high concentration N<+> substrate 11 by using the epitaxial growth method. A low concentration P<-> layer 12 is formed in the N<-> layer 17 by the thermal diffusion method or the like. Then, by an oridinary method, high concentration P<+> layer 13 and N<+> layer 14 are formed in a mosaic pattern. Finally, ohmic contact layers 15 and 16 are provided for the completion of a diode. Using this procedure, a P<-> laye formed by diffusion into the N<-> layer 17, a difficult task can be avoided of epitaxially growing the P<-> layer 12 directly upon the N<+> substrate 11. Withstand voltage property stabilized and leak current reduced, a diode with a short recovery time is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2519881A JPS57139970A (en) | 1981-02-23 | 1981-02-23 | Diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2519881A JPS57139970A (en) | 1981-02-23 | 1981-02-23 | Diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57139970A true JPS57139970A (en) | 1982-08-30 |
Family
ID=12159248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2519881A Pending JPS57139970A (en) | 1981-02-23 | 1981-02-23 | Diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57139970A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11340241A (en) * | 1998-05-20 | 1999-12-10 | Samsung Electronics Co Ltd | Semiconductor element diode and its manufacture |
-
1981
- 1981-02-23 JP JP2519881A patent/JPS57139970A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11340241A (en) * | 1998-05-20 | 1999-12-10 | Samsung Electronics Co Ltd | Semiconductor element diode and its manufacture |
| JP4647734B2 (en) * | 1998-05-20 | 2011-03-09 | フェアチャイルドコリア半導體株式会社 | Semiconductor device diode and method of manufacturing the same |
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