JPS57202786A - Manufacture of zener diode - Google Patents

Manufacture of zener diode

Info

Publication number
JPS57202786A
JPS57202786A JP8779281A JP8779281A JPS57202786A JP S57202786 A JPS57202786 A JP S57202786A JP 8779281 A JP8779281 A JP 8779281A JP 8779281 A JP8779281 A JP 8779281A JP S57202786 A JPS57202786 A JP S57202786A
Authority
JP
Japan
Prior art keywords
region
type
diffusion
layer
zener diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8779281A
Other languages
Japanese (ja)
Inventor
Keiji Inoue
Takeshi Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8779281A priority Critical patent/JPS57202786A/en
Publication of JPS57202786A publication Critical patent/JPS57202786A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To obtain the diode with the desired breakdown voltage by a method wherein needles are contacted to two diffusion regions respectively in the stage when the diode is manufactured, the breakdown voltage of the Zener diode is measured with one needle in positive and the other needle in negative, and additional diffusion is performed if necessary. CONSTITUTION:An n<+> type buried region 3, to be turned to a floating collector layer, is formed by diffusion on a p type Si substrate 1, an n<-> type layer 2 is epitaxially grown on the whole surface including the buried region, and the layer 2 including a region 3 is formed into an island shape using a p type region 4. At this time, a p<+> type region 7 reaching the region 3 is provided in the island-type layer 2, and it is used as the anodic part of the Zener diode. Then, a p<+> type region 5, including the region 7, is formed by diffusion in the layer 2, an n<+> type region 6 is provided in the region 5, and at the same time, an n<+> type region 6a to be used for measurement is additionally formed by diffusion in close vicinity to the region 5. Subsequently, an insulating film 8 is coated on the whole surface, windows 11 and 11a are provided on the regions 6 and 6a respectively, the needles are uprightly positioned in these windows and voltage is measured by bringing the region 6 in positive and the region 6a in negative, and additional diffusion is performed when the desired voltage is not obtained.
JP8779281A 1981-06-05 1981-06-05 Manufacture of zener diode Pending JPS57202786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8779281A JPS57202786A (en) 1981-06-05 1981-06-05 Manufacture of zener diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8779281A JPS57202786A (en) 1981-06-05 1981-06-05 Manufacture of zener diode

Publications (1)

Publication Number Publication Date
JPS57202786A true JPS57202786A (en) 1982-12-11

Family

ID=13924823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8779281A Pending JPS57202786A (en) 1981-06-05 1981-06-05 Manufacture of zener diode

Country Status (1)

Country Link
JP (1) JPS57202786A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124126A (en) * 1984-11-20 1986-06-11 Nec Kansai Ltd Manufacture of semiconductor device
JPS62199069A (en) * 1986-02-27 1987-09-02 Rohm Co Ltd Impurity concentration controlling method in vicinity of p-n junction
JPH0385771A (en) * 1989-08-30 1991-04-10 New Japan Radio Co Ltd Manufacture of buried zener diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53116083A (en) * 1977-03-22 1978-10-11 Hitachi Ltd Manufacture for zener diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53116083A (en) * 1977-03-22 1978-10-11 Hitachi Ltd Manufacture for zener diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124126A (en) * 1984-11-20 1986-06-11 Nec Kansai Ltd Manufacture of semiconductor device
JPS62199069A (en) * 1986-02-27 1987-09-02 Rohm Co Ltd Impurity concentration controlling method in vicinity of p-n junction
JPH0385771A (en) * 1989-08-30 1991-04-10 New Japan Radio Co Ltd Manufacture of buried zener diode

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