JPS54100674A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS54100674A JPS54100674A JP769778A JP769778A JPS54100674A JP S54100674 A JPS54100674 A JP S54100674A JP 769778 A JP769778 A JP 769778A JP 769778 A JP769778 A JP 769778A JP S54100674 A JPS54100674 A JP S54100674A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystal
- sio
- regions
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain a IGFET of large mutual conductance with the distance between regions shortened, by oxidizing both flanks of a polycrystal Si gate electrode provided onto a semiconductor substrate and by diffusion-forming source and drain regions right under the boundary between the oxidized film and gate electrode.
CONSTITUTION: On the surface of P-type Si substrate 21, SiO2 film 22 and Si3N4 film 23 are stacked and adhered and on it, polycrystal Si film 24 and Si3N4 film 25 are formed. Next, a striped gate pattern is provided to film 25 by photoetching and used as a mask to oxidize polycrystal film 24 for partial conversion into SiO2 film 26, which is etched and removed. By using films 25 and 23 as masks, the flank of exposed gate polycrystal film 24 is oxidized to form SiO2 film 26, and N-type source and drain regions 27 and 28 are diffusion-formed that a PN junction surface will by produced right under the boundary between this film 26 and polycrystal film 24. As a result, the distance between regions 27 and 28 can be made below 0.1μm and the parasitic capacity becomes extremely small.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP769778A JPS54100674A (en) | 1978-01-25 | 1978-01-25 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP769778A JPS54100674A (en) | 1978-01-25 | 1978-01-25 | Semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54100674A true JPS54100674A (en) | 1979-08-08 |
Family
ID=11672952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP769778A Pending JPS54100674A (en) | 1978-01-25 | 1978-01-25 | Semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54100674A (en) |
-
1978
- 1978-01-25 JP JP769778A patent/JPS54100674A/en active Pending
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