JPS54158878A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54158878A JPS54158878A JP6795778A JP6795778A JPS54158878A JP S54158878 A JPS54158878 A JP S54158878A JP 6795778 A JP6795778 A JP 6795778A JP 6795778 A JP6795778 A JP 6795778A JP S54158878 A JPS54158878 A JP S54158878A
- Authority
- JP
- Japan
- Prior art keywords
- film
- source
- diffusion
- sio
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain an IGFET without depending upon matching precision by fixing the relation between source and drain regions and a channel stopper region and that between source and drain regions and an insulating gate region by self-matching.
CONSTITUTION: On P-type Si substrate 1, SiO2 film 2 is bonded and removed over source, drain and gate formation regions and the window circumference of remaining film 2 is covered with Si3N4 film 3, which is used as a mask to form N-type source and drain regions 4 by diffusion. Through intruding diffusion, region 4 is made deeper and film 2 is partially removed by etching with film 3 used as a mask. Then, P-type channel stopper region 5 is formed here by diffusion and heat-treated to produce SiO2 film 6 only on regions 4 and 5. Next, the surface is sufficiently cleaned and heat-treated again to produce gate SiO2 2 film 7, and window is made to fit Al gate electrode 8.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6795778A JPS54158878A (en) | 1978-06-05 | 1978-06-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6795778A JPS54158878A (en) | 1978-06-05 | 1978-06-05 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54158878A true JPS54158878A (en) | 1979-12-15 |
Family
ID=13359939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6795778A Pending JPS54158878A (en) | 1978-06-05 | 1978-06-05 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54158878A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4973983A (en) * | 1972-09-29 | 1974-07-17 | ||
JPS51151081A (en) * | 1975-06-20 | 1976-12-25 | Matsushita Electric Ind Co Ltd | Mos type semiconductor apparatus and that manufacturing method |
JPS52131483A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Mis-type semiconductor device |
-
1978
- 1978-06-05 JP JP6795778A patent/JPS54158878A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4973983A (en) * | 1972-09-29 | 1974-07-17 | ||
JPS51151081A (en) * | 1975-06-20 | 1976-12-25 | Matsushita Electric Ind Co Ltd | Mos type semiconductor apparatus and that manufacturing method |
JPS52131483A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Mis-type semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55153377A (en) | Production of semiconductor device | |
JPS5736842A (en) | Semiconductor integrated circuit device | |
JPS5633881A (en) | Manufacture of semiconductor device | |
JPS54158878A (en) | Manufacture of semiconductor device | |
JPS5483778A (en) | Mos semiconductor device and its manufacture | |
JPS54153583A (en) | Semiconductor device | |
JPS54139488A (en) | Mos semiconductor element and its manufacture | |
JPS54162479A (en) | Manufacture of semiconductor device | |
JPS54112183A (en) | Mos type integrated-circuit device and its manufacture | |
JPS5538019A (en) | Manufacturing of semiconductor device | |
JPS5339093A (en) | Production of silicon gate complementary type mis semiconductor device | |
JPS5533037A (en) | Manufacture of semiconductor device | |
JPS5670669A (en) | Longitudinal semiconductor device | |
JPS54154979A (en) | Manufacture of insulated gate type semiconductor device | |
JPS5492070A (en) | Mis field effect transistor and its manufacture | |
JPS5650579A (en) | Manufacture of junction type field effect semiconductor device | |
JPS54155784A (en) | Manufacture of semiconductor integrated-circuit device | |
JPS5580333A (en) | Manufacture of mos semiconductor device | |
JPS54105980A (en) | Insulator gate type semiconductor device | |
JPS5487192A (en) | Mis type semiconductor intergrated circuit and its manufacture | |
JPS5756976A (en) | Manufacture of junction type field effect transistor | |
JPS5691475A (en) | Semiconductor | |
JPS54139487A (en) | Manufacture of mis semiconductor device | |
JPS5452475A (en) | Field effect transistor of insulation gate type | |
JPS5587485A (en) | Mis type semiconductor device |