JPS5587485A - Mis type semiconductor device - Google Patents
Mis type semiconductor deviceInfo
- Publication number
- JPS5587485A JPS5587485A JP16311978A JP16311978A JPS5587485A JP S5587485 A JPS5587485 A JP S5587485A JP 16311978 A JP16311978 A JP 16311978A JP 16311978 A JP16311978 A JP 16311978A JP S5587485 A JPS5587485 A JP S5587485A
- Authority
- JP
- Japan
- Prior art keywords
- channel
- film
- type
- sio
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To accomplish a shorter channel by projecting the channel into the substrate thicker than the source and the drain.
CONSTITUTION: An n-layer 15 is produced by ion implantation from an opening 21a made through an SiO2 film on a p-type Si. The opening 21a is expanded to form a gate oxide film 21b, and a resit mask 16 is used to selectively form a p+- type poly Si electrode 4 on the central part thereof. Then, n+-type source and drain layers 2 and 3 produced shallower than the channel 15. Then, after the removal of the resist, an SiO2 film is applied and a window is etched to produce electrode wires 18, 19 and 20. This arrangement allows effective avoidance of punch through thereby accomplishing finer FETs.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16311978A JPS5587485A (en) | 1978-12-26 | 1978-12-26 | Mis type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16311978A JPS5587485A (en) | 1978-12-26 | 1978-12-26 | Mis type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5587485A true JPS5587485A (en) | 1980-07-02 |
Family
ID=15767528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16311978A Pending JPS5587485A (en) | 1978-12-26 | 1978-12-26 | Mis type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5587485A (en) |
-
1978
- 1978-12-26 JP JP16311978A patent/JPS5587485A/en active Pending
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