JPS5587482A - Mis type semiconductor device - Google Patents
Mis type semiconductor deviceInfo
- Publication number
- JPS5587482A JPS5587482A JP16264378A JP16264378A JPS5587482A JP S5587482 A JPS5587482 A JP S5587482A JP 16264378 A JP16264378 A JP 16264378A JP 16264378 A JP16264378 A JP 16264378A JP S5587482 A JPS5587482 A JP S5587482A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layers
- window
- produced
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To accomplish a shorter channel by increasing the space of the source and drain layers facing each other along with depth.
CONSTITUTION: A p+-channel cut is provided on the p-type Si substrate 30 beforehand. A window 31a is eteched on the SiO2 film 31. n+-layer 32 is produced by slant ion implantation and similarly an n+-layer 33 produced. Then these layers are annealed. Subsequently, the film 31 is removed from the gate region to form a gate oxide film 34 where a gate electrode 35 is formed so as no to overlap the layers 32 and 33. With the electrode 35 as mask, the film 34 is removed, and covered with PSG36, a window is selectively etched to make a wiring pattern 37. With such an arrangement, improved punch through dielectric strength allows application of a high voltage to the source and drain thereby accomplishing shorter channel. In addition, less parastic capacitance enables a high speed action.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16264378A JPS5587482A (en) | 1978-12-25 | 1978-12-25 | Mis type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16264378A JPS5587482A (en) | 1978-12-25 | 1978-12-25 | Mis type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5587482A true JPS5587482A (en) | 1980-07-02 |
Family
ID=15758512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16264378A Pending JPS5587482A (en) | 1978-12-25 | 1978-12-25 | Mis type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5587482A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08204189A (en) * | 1995-01-30 | 1996-08-09 | Rohm Co Ltd | Manufacture of semiconductor device |
-
1978
- 1978-12-25 JP JP16264378A patent/JPS5587482A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08204189A (en) * | 1995-01-30 | 1996-08-09 | Rohm Co Ltd | Manufacture of semiconductor device |
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