JPS54126481A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS54126481A JPS54126481A JP3396678A JP3396678A JPS54126481A JP S54126481 A JPS54126481 A JP S54126481A JP 3396678 A JP3396678 A JP 3396678A JP 3396678 A JP3396678 A JP 3396678A JP S54126481 A JPS54126481 A JP S54126481A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- layer
- mask
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE: To obtain a gate insulating film wider than the gate electrode to improve dielectric strength by softening and extending a resistor pattern, which is a gate forming mask, after being used for gate formation, and using this pattern as a mask to etch selectively the insulating film.
CONSTITUTION: SiO2 film 20 is caused to adhere onto P-type Si substrate 10, and poly Si layer 30 which becomes a gate electrode is grown on this film 20. Then, resistor pattern 40 is provided on layer 30 and is used as a mask to remove the exposed part of layer 30 by etching. Next, substrate 10 is heated at approximately 200°C in N2 gas to soften and flow pattern 40, and the width of pattern 40 is made wider than layer 30 and extend onto film 20. After that, this extended pattern 40 is used as a mask to remove the exposed part of film 20 by etching, and pattern 40 is removed to casue PSG film 50 to adhere onto all the surface. Next, p in film 50 is diffused by heating, and N-type source and drain regions 15 are formed in substrate 10. Thus, gate insulating film 20 is made wider than gate electrode 30.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3396678A JPS54126481A (en) | 1978-03-24 | 1978-03-24 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3396678A JPS54126481A (en) | 1978-03-24 | 1978-03-24 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54126481A true JPS54126481A (en) | 1979-10-01 |
Family
ID=12401224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3396678A Pending JPS54126481A (en) | 1978-03-24 | 1978-03-24 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54126481A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5736866A (en) * | 1980-08-15 | 1982-02-27 | Seiko Epson Corp | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5123085A (en) * | 1974-08-20 | 1976-02-24 | Matsushita Electric Ind Co Ltd | Handotaisochino seizohoho |
-
1978
- 1978-03-24 JP JP3396678A patent/JPS54126481A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5123085A (en) * | 1974-08-20 | 1976-02-24 | Matsushita Electric Ind Co Ltd | Handotaisochino seizohoho |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5736866A (en) * | 1980-08-15 | 1982-02-27 | Seiko Epson Corp | Manufacture of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54126481A (en) | Production of semiconductor device | |
JPS54130883A (en) | Production of semiconductor device | |
JPS5583267A (en) | Method of fabricating semiconductor device | |
JPS54149465A (en) | Production of semiconductor device | |
JPS55153325A (en) | Manufacture of semiconductor device | |
JPS5541738A (en) | Preparation of semiconductor device | |
JPS5515230A (en) | Semiconductor device and its manufacturing method | |
JPS54109783A (en) | Manufacture of semiconductor device | |
JPS54121683A (en) | Semiconductor device and its manufacture | |
JPS54116185A (en) | Manufacture for semiconductor device | |
JPS5533037A (en) | Manufacture of semiconductor device | |
JPS54121684A (en) | Manufacture of semkconductor device | |
JPS54117690A (en) | Production of semiconductor device | |
JPS54139486A (en) | Manufacture of semiconductor device | |
JPS57193062A (en) | Manufacture of semiconductor device | |
JPS56160051A (en) | Formation of insulating layer | |
JPS54124687A (en) | Production of semiconductor device | |
JPS5544779A (en) | Producing method for mos semiconductor device | |
JPS54154979A (en) | Manufacture of insulated gate type semiconductor device | |
JPS5578568A (en) | Manufacture of semiconductor device | |
JPS5534447A (en) | Preparation of semicinductor device | |
JPS55157242A (en) | Manufacture of semiconductor device | |
JPS54134580A (en) | Production of semiconductor integrated circuit device | |
JPS5710246A (en) | Manufacture of semiconductor device | |
JPS5572077A (en) | Semiconductor device |