JPS54126481A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54126481A
JPS54126481A JP3396678A JP3396678A JPS54126481A JP S54126481 A JPS54126481 A JP S54126481A JP 3396678 A JP3396678 A JP 3396678A JP 3396678 A JP3396678 A JP 3396678A JP S54126481 A JPS54126481 A JP S54126481A
Authority
JP
Japan
Prior art keywords
film
pattern
layer
mask
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3396678A
Other languages
Japanese (ja)
Inventor
Takehide Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3396678A priority Critical patent/JPS54126481A/en
Publication of JPS54126481A publication Critical patent/JPS54126481A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To obtain a gate insulating film wider than the gate electrode to improve dielectric strength by softening and extending a resistor pattern, which is a gate forming mask, after being used for gate formation, and using this pattern as a mask to etch selectively the insulating film.
CONSTITUTION: SiO2 film 20 is caused to adhere onto P-type Si substrate 10, and poly Si layer 30 which becomes a gate electrode is grown on this film 20. Then, resistor pattern 40 is provided on layer 30 and is used as a mask to remove the exposed part of layer 30 by etching. Next, substrate 10 is heated at approximately 200°C in N2 gas to soften and flow pattern 40, and the width of pattern 40 is made wider than layer 30 and extend onto film 20. After that, this extended pattern 40 is used as a mask to remove the exposed part of film 20 by etching, and pattern 40 is removed to casue PSG film 50 to adhere onto all the surface. Next, p in film 50 is diffused by heating, and N-type source and drain regions 15 are formed in substrate 10. Thus, gate insulating film 20 is made wider than gate electrode 30.
COPYRIGHT: (C)1979,JPO&Japio
JP3396678A 1978-03-24 1978-03-24 Production of semiconductor device Pending JPS54126481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3396678A JPS54126481A (en) 1978-03-24 1978-03-24 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3396678A JPS54126481A (en) 1978-03-24 1978-03-24 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54126481A true JPS54126481A (en) 1979-10-01

Family

ID=12401224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3396678A Pending JPS54126481A (en) 1978-03-24 1978-03-24 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54126481A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736866A (en) * 1980-08-15 1982-02-27 Seiko Epson Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123085A (en) * 1974-08-20 1976-02-24 Matsushita Electric Ind Co Ltd Handotaisochino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123085A (en) * 1974-08-20 1976-02-24 Matsushita Electric Ind Co Ltd Handotaisochino seizohoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736866A (en) * 1980-08-15 1982-02-27 Seiko Epson Corp Manufacture of semiconductor device

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