JPS55130162A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS55130162A JPS55130162A JP3686779A JP3686779A JPS55130162A JP S55130162 A JPS55130162 A JP S55130162A JP 3686779 A JP3686779 A JP 3686779A JP 3686779 A JP3686779 A JP 3686779A JP S55130162 A JPS55130162 A JP S55130162A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- region
- film
- base
- contact hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 238000001259 photo etching Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To microminiaturize an emitter region of a semiconductor device without an overetching by forming a contact hole on an emitter by a self-alignment at the same position as the hole in a step of diffusing the emitter. CONSTITUTION:There are formed a base region 2 and a SiO2 film 3 produced by a thermal oxidation of a planar semiconductor element on a silicon substrate 1. A masking film 4 having a surface stabilizing function is then formed on the entire surface by a method without thermal oxidiation on the film 3. A hole is then perforated by a photoetching process at predetermined portion on the base, and impurity is diffused to form an emitter region 5. A thermal oxidation film 3' and the masking film 4 on the region 5 are partially etched and removed to form a contact hole 6 at the emitter. Finally, a base contact hole 7 is formed by a photoetching process at the predetermined portion on the base region 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3686779A JPS55130162A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3686779A JPS55130162A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55130162A true JPS55130162A (en) | 1980-10-08 |
Family
ID=12481726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3686779A Pending JPS55130162A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55130162A (en) |
-
1979
- 1979-03-30 JP JP3686779A patent/JPS55130162A/en active Pending
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