JPS55130163A - Method of fabricating transistor - Google Patents

Method of fabricating transistor

Info

Publication number
JPS55130163A
JPS55130163A JP3749879A JP3749879A JPS55130163A JP S55130163 A JPS55130163 A JP S55130163A JP 3749879 A JP3749879 A JP 3749879A JP 3749879 A JP3749879 A JP 3749879A JP S55130163 A JPS55130163 A JP S55130163A
Authority
JP
Japan
Prior art keywords
hole
emitter
film
base electrode
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3749879A
Other languages
Japanese (ja)
Inventor
Kazuhiro Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3749879A priority Critical patent/JPS55130163A/en
Publication of JPS55130163A publication Critical patent/JPS55130163A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the characteristics and yield of a transistor, prevent the increase of the layer resistance directly under a base electrode pickup hole and improve the insulation between an emitter and a base thereof by retaining a Si3N4 film at the periphery of an emitter impurity diffused hole and a base electrode hole portion. CONSTITUTION:An Si3N4 film 17 is formed partially on the surface of a semiconductor substrate 12. The film 17 is then removed except the peripheries of the base electrode pickup portion and the emitter electrode pickup portion by a photoetching process. The exposed surface is then thermally oxidized to form a base region 19 therein. The thermally oxidized film is then selectively removed by a photoetching process to form hole 18. An emitter region 21 is formed in the semiconductor substrate through the hole 18. Only the Si3N4 film retained at the base electrode pickup portion 22 is then removed.
JP3749879A 1979-03-29 1979-03-29 Method of fabricating transistor Pending JPS55130163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3749879A JPS55130163A (en) 1979-03-29 1979-03-29 Method of fabricating transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3749879A JPS55130163A (en) 1979-03-29 1979-03-29 Method of fabricating transistor

Publications (1)

Publication Number Publication Date
JPS55130163A true JPS55130163A (en) 1980-10-08

Family

ID=12499179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3749879A Pending JPS55130163A (en) 1979-03-29 1979-03-29 Method of fabricating transistor

Country Status (1)

Country Link
JP (1) JPS55130163A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5092686A (en) * 1973-12-14 1975-07-24
JPS5099086A (en) * 1973-12-27 1975-08-06
JPS5284978A (en) * 1976-01-07 1977-07-14 Mitsubishi Electric Corp Production of semiconducotr device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5092686A (en) * 1973-12-14 1975-07-24
JPS5099086A (en) * 1973-12-27 1975-08-06
JPS5284978A (en) * 1976-01-07 1977-07-14 Mitsubishi Electric Corp Production of semiconducotr device

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