JPS5284978A - Production of semiconducotr device - Google Patents
Production of semiconducotr deviceInfo
- Publication number
- JPS5284978A JPS5284978A JP122276A JP122276A JPS5284978A JP S5284978 A JPS5284978 A JP S5284978A JP 122276 A JP122276 A JP 122276A JP 122276 A JP122276 A JP 122276A JP S5284978 A JPS5284978 A JP S5284978A
- Authority
- JP
- Japan
- Prior art keywords
- production
- forming
- semiconducotr
- electrodes
- semiconducotr device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: An IC of high density and high speed is obtained by first openign contact holes for forming electrodes which are the finest patterns, then forming each operating region by an ion implantation method, thereafter attaching electrodes.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP122276A JPS5914900B2 (en) | 1976-01-07 | 1976-01-07 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP122276A JPS5914900B2 (en) | 1976-01-07 | 1976-01-07 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5284978A true JPS5284978A (en) | 1977-07-14 |
JPS5914900B2 JPS5914900B2 (en) | 1984-04-06 |
Family
ID=11495429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP122276A Expired JPS5914900B2 (en) | 1976-01-07 | 1976-01-07 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5914900B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55130163A (en) * | 1979-03-29 | 1980-10-08 | Toshiba Corp | Method of fabricating transistor |
US9180616B2 (en) | 2013-03-21 | 2015-11-10 | Günther Heisskanaltechnik Gmbh | Component part for an injection molding tool |
-
1976
- 1976-01-07 JP JP122276A patent/JPS5914900B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55130163A (en) * | 1979-03-29 | 1980-10-08 | Toshiba Corp | Method of fabricating transistor |
US9180616B2 (en) | 2013-03-21 | 2015-11-10 | Günther Heisskanaltechnik Gmbh | Component part for an injection molding tool |
Also Published As
Publication number | Publication date |
---|---|
JPS5914900B2 (en) | 1984-04-06 |
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