JPS5673453A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5673453A JPS5673453A JP15125679A JP15125679A JPS5673453A JP S5673453 A JPS5673453 A JP S5673453A JP 15125679 A JP15125679 A JP 15125679A JP 15125679 A JP15125679 A JP 15125679A JP S5673453 A JPS5673453 A JP S5673453A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- silicide
- alsi
- contact resistance
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To reduce sharply the contact resistance of a wiring against the upper layer wiring in a semiconductor device by a method wherein against the wiring of Ta or Ta silicide oxidizable easily, a metal or the metal silicide having a different melting point is arranged to form the two layer structure. CONSTITUTION:A polycrystalline Si gate electrode 204 is formed against a gate oxide film 203 and an N<+> layer 202 on a P type substrate 201, and the Ta wiring 205, an Mo silicide 206 are laminated consecutively. Then it is covered with a CVD SiO2 film 207, and after it is heat treated in N2 gas, the wiring 208 is formed with AlSi. When the Ta 205 and the Mo silicide 206 are evaporated consecutively in this way, the generation of a Ta oxide on the Ta can be prevented considerably, and because the stable Mo silicide 206 exists on the Ta, so that the contact resistance with the AlSi 208 is reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15125679A JPS5673453A (en) | 1979-11-20 | 1979-11-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15125679A JPS5673453A (en) | 1979-11-20 | 1979-11-20 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5673453A true JPS5673453A (en) | 1981-06-18 |
Family
ID=15514680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15125679A Pending JPS5673453A (en) | 1979-11-20 | 1979-11-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5673453A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6577005B1 (en) * | 1997-11-27 | 2003-06-10 | Kabushiki Kaishia Toshiba | Fine protuberance structure and method of production thereof |
-
1979
- 1979-11-20 JP JP15125679A patent/JPS5673453A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6577005B1 (en) * | 1997-11-27 | 2003-06-10 | Kabushiki Kaishia Toshiba | Fine protuberance structure and method of production thereof |
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