JPS6419770A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6419770A JPS6419770A JP62176109A JP17610987A JPS6419770A JP S6419770 A JPS6419770 A JP S6419770A JP 62176109 A JP62176109 A JP 62176109A JP 17610987 A JP17610987 A JP 17610987A JP S6419770 A JPS6419770 A JP S6419770A
- Authority
- JP
- Japan
- Prior art keywords
- formation
- accomplished
- active layer
- diffusion layers
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 9
- 230000015572 biosynthetic process Effects 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000004913 activation Effects 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910016006 MoSi Inorganic materials 0.000 abstract 1
- 239000012298 atmosphere Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 229910052755 nonmetal Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To prevent a 'penetration phenomenon' attributable to the silification of an active layer and to reduce parasitic resistance by a method wherein no direct contact is allowed to be present between a metal such as Al constituting a source or drain electrode and diffusion layers and a conductive non-metal layer is provided between them. CONSTITUTION:An active layer 2 is formed of polycrystalline Si or singlecrystal Si on a transparent insulating substrate 1, which is followed by patterning. Thermal oxidation is accomplished on the active layer 2 for the formation of a gate oxide film 4, whereon a gate electrode region is built of a polycrystalline Si layer, to be patterned into a gate electrode. An ion implanter is next used for the formation of diffusion layers 3, 3', and 3''. Activation is then accomplished in an N2 atmosphere. Spattering is next used for the formation of MoSi layers 9 and 9'. The ion implanter is employed again for the formation of richly doped n<+> diffusion layers 10 and 10'. Activation therefor is accomplished in an O2 atmosphere. An SiO2 interlayer insulating film 6 is formed, and a contact hole is provided by using the conventional technique. Finally, a source electrode 7 and a drain electrode 8 are formed of Al.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62176109A JPS6419770A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62176109A JPS6419770A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6419770A true JPS6419770A (en) | 1989-01-23 |
Family
ID=16007848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62176109A Pending JPS6419770A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6419770A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4999690A (en) * | 1989-12-19 | 1991-03-12 | Texas Instruments Incorporated | Transistor |
| US5231296A (en) * | 1989-12-19 | 1993-07-27 | Texas Instruments Incorporated | Thin film transistor structure with insulating mask |
| US11014845B2 (en) | 2014-12-04 | 2021-05-25 | Corning Incorporated | Method of laser cutting glass using non-diffracting laser beams |
-
1987
- 1987-07-14 JP JP62176109A patent/JPS6419770A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4999690A (en) * | 1989-12-19 | 1991-03-12 | Texas Instruments Incorporated | Transistor |
| US5231296A (en) * | 1989-12-19 | 1993-07-27 | Texas Instruments Incorporated | Thin film transistor structure with insulating mask |
| US11014845B2 (en) | 2014-12-04 | 2021-05-25 | Corning Incorporated | Method of laser cutting glass using non-diffracting laser beams |
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