JPS63141360A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS63141360A
JPS63141360A JP28829386A JP28829386A JPS63141360A JP S63141360 A JPS63141360 A JP S63141360A JP 28829386 A JP28829386 A JP 28829386A JP 28829386 A JP28829386 A JP 28829386A JP S63141360 A JPS63141360 A JP S63141360A
Authority
JP
Japan
Prior art keywords
layer
formed
tin
polycrystalline si
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28829386A
Inventor
Seiichi Iwamatsu
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP28829386A priority Critical patent/JPS63141360A/en
Publication of JPS63141360A publication Critical patent/JPS63141360A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout

Abstract

PURPOSE:To reduce the area a resistance element occupies for an enhanced integration by a method wherein an oxygen or nitrogen ion implanted layer is formed in a polycrystalline Si layer formed on a semiconductor substrate surface and, further, a vertical resistance element is formed incorporating a film of such a metal nitride or silicide of TiN, NSi, and MoSi. CONSTITUTION:On the surface of a semiconductor substrate 1, a diffusion layer 2 and field oxide film 3 are formed. A polycrystalline Si layer 4 is formed in a contact hole and, on the layer 4, an interlayer insulating film 7 is formed. A second contact hole is provided, and then a nitrogen or oxygen ions are implanted for the formation of an ion-implanted layer 5 in the polycrystalline Si layer 4. A process follows wherein a TiN layer 6 is formed and an Al elec trode 8 is built thereon by changing the power input. The purpose of the TiN layer 6 lies in preventing the conversion into an alloy of the Al electrode 8 and polycrystalline Si layer 4 and, therefore, TiN may be replaced by WSi, MoSi, or the like. Again, the diffusion layer 2 may be SRAM or the like, to serve as source.drain diffusion layers.
JP28829386A 1986-12-03 1986-12-03 Semiconductor device Pending JPS63141360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28829386A JPS63141360A (en) 1986-12-03 1986-12-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28829386A JPS63141360A (en) 1986-12-03 1986-12-03 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS63141360A true JPS63141360A (en) 1988-06-13

Family

ID=17728280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28829386A Pending JPS63141360A (en) 1986-12-03 1986-12-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS63141360A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008082A (en) * 1995-09-14 1999-12-28 Micron Technology, Inc. Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry
US6093596A (en) * 1995-09-14 2000-07-25 Micron Technology, Inc. Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008082A (en) * 1995-09-14 1999-12-28 Micron Technology, Inc. Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry
US6093596A (en) * 1995-09-14 2000-07-25 Micron Technology, Inc. Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry
US6340835B1 (en) 1995-09-14 2002-01-22 Micron Technology, Inc. Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry
US6340834B1 (en) 1995-09-14 2002-01-22 Micron Technology, Inc. Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry
US6391734B1 (en) 1995-09-14 2002-05-21 Micron Technology, Inc. Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry
US6423606B1 (en) 1995-09-14 2002-07-23 Micron Technology, Inc. Semiconductor processing methods, methods of forming a resistor and methods of forming a diode
US6432764B2 (en) 1995-09-14 2002-08-13 Micron Technology, Inc. Methods of forming resistors
US6455918B2 (en) 1995-09-14 2002-09-24 Micron Technology, Inc. Integrated circuitry
US6482693B1 (en) 1995-09-14 2002-11-19 Micron Technology, Inc. Methods of forming diodes

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