JPS5492071A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5492071A
JPS5492071A JP15823377A JP15823377A JPS5492071A JP S5492071 A JPS5492071 A JP S5492071A JP 15823377 A JP15823377 A JP 15823377A JP 15823377 A JP15823377 A JP 15823377A JP S5492071 A JPS5492071 A JP S5492071A
Authority
JP
Japan
Prior art keywords
layer
type
etching
oxide film
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15823377A
Other languages
Japanese (ja)
Other versions
JPS6038031B2 (en
Inventor
Tetsushi Sakai
Yoshiharu Kobayashi
Takahiro Makino
Masaaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP52158233A priority Critical patent/JPS6038031B2/en
Publication of JPS5492071A publication Critical patent/JPS5492071A/en
Publication of JPS6038031B2 publication Critical patent/JPS6038031B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the parasitic capacity by forming the small and shallow source and drain for E- and D-type FET's on the substrate and thus to increase the response velocity through formation of the electrode via the lead-out layer. CONSTITUTION:Both the ion injection and the partial oxidation are carried out on the oxide film of P-type Si substrate 61 to form P<+>-layer 99 and oxide film 63, and then Al2O3138, Si3N4139, SiO2140 and N-type doped poly Si141 are laminated. Window 149 and 150 are provided by etching via SiO2 mask 145, and then Si layer 152 is coated to drill window 160 and 161 through etching. Then N-type doped poly Si163 is coated, and layer 152 is lifted off. Oxide films 84-86 are formed through oxidation to then form N-layers 91-94, and surface oxide film 97 and 98 are exposed through etching by masks 84-86. Then P<+>-type ion injection layer 95 and 96 are formed through the film. Openings 100-102 are drilled selectively to oxide films 84-86 finally with the electrode attached. In such constitution, N-layers 91-94 can be formed small and shallow, so that parasitic capacity can be reduced.
JP52158233A 1977-12-29 1977-12-29 Manufacturing method for semiconductor devices Expired JPS6038031B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52158233A JPS6038031B2 (en) 1977-12-29 1977-12-29 Manufacturing method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52158233A JPS6038031B2 (en) 1977-12-29 1977-12-29 Manufacturing method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5492071A true JPS5492071A (en) 1979-07-20
JPS6038031B2 JPS6038031B2 (en) 1985-08-29

Family

ID=15667176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52158233A Expired JPS6038031B2 (en) 1977-12-29 1977-12-29 Manufacturing method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS6038031B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62242356A (en) * 1986-04-14 1987-10-22 Agency Of Ind Science & Technol Gaas logical integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856381A (en) * 1971-11-18 1973-08-08
JPS4914792A (en) * 1972-04-14 1974-02-08

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856381A (en) * 1971-11-18 1973-08-08
JPS4914792A (en) * 1972-04-14 1974-02-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62242356A (en) * 1986-04-14 1987-10-22 Agency Of Ind Science & Technol Gaas logical integrated circuit

Also Published As

Publication number Publication date
JPS6038031B2 (en) 1985-08-29

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