JPS55130139A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
JPS55130139A
JPS55130139A JP3821879A JP3821879A JPS55130139A JP S55130139 A JPS55130139 A JP S55130139A JP 3821879 A JP3821879 A JP 3821879A JP 3821879 A JP3821879 A JP 3821879A JP S55130139 A JPS55130139 A JP S55130139A
Authority
JP
Japan
Prior art keywords
width
depth
oxide film
semiconductor device
resist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3821879A
Other languages
Japanese (ja)
Inventor
Yoshihide Nagakubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3821879A priority Critical patent/JPS55130139A/en
Publication of JPS55130139A publication Critical patent/JPS55130139A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To improve reliability of a semiconductor devive by forming a separating region with insulator layers, the depth of which is larger than their width, as material to make the semiconductor device elements separated. CONSTITUTION:A resist pattern 2 is formed on a silicon substrate 1. An etching portion 3 is formed by ion-milling. Then, the resist pattern 2 is eliminated. With an oxide film 4 grown by heat-oxidation, the etching portion 3 is filled with heat- oxide layers 5. A field region 6 is formed by etching the oxide film 4. Then, a gate oxide film 7 and others are formed to complete a transistor. Element separation is assured by making a separation region 6 in such that its width is 3mum or less, its depth is 1mum larger than its width, and the depth is 1.5 times of more the width.
JP3821879A 1979-03-30 1979-03-30 Semiconductor device and its manufacturing method Pending JPS55130139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3821879A JPS55130139A (en) 1979-03-30 1979-03-30 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3821879A JPS55130139A (en) 1979-03-30 1979-03-30 Semiconductor device and its manufacturing method

Publications (1)

Publication Number Publication Date
JPS55130139A true JPS55130139A (en) 1980-10-08

Family

ID=12519160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3821879A Pending JPS55130139A (en) 1979-03-30 1979-03-30 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS55130139A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130446A (en) * 1981-02-05 1982-08-12 Nec Corp Manufacture of semiconductor device
JPS589333A (en) * 1981-07-08 1983-01-19 Hitachi Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130446A (en) * 1981-02-05 1982-08-12 Nec Corp Manufacture of semiconductor device
JPS6217864B2 (en) * 1981-02-05 1987-04-20 Nippon Electric Co
JPS589333A (en) * 1981-07-08 1983-01-19 Hitachi Ltd Semiconductor device

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