JPS5529783A - Manufacture of semiconductor detector - Google Patents
Manufacture of semiconductor detectorInfo
- Publication number
- JPS5529783A JPS5529783A JP10372178A JP10372178A JPS5529783A JP S5529783 A JPS5529783 A JP S5529783A JP 10372178 A JP10372178 A JP 10372178A JP 10372178 A JP10372178 A JP 10372178A JP S5529783 A JPS5529783 A JP S5529783A
- Authority
- JP
- Japan
- Prior art keywords
- film
- lead
- gate insulating
- insulating film
- corpuscle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
PURPOSE: To avoid the contamination of an extremely-fine-corpuscle film in a process as much as possible by forming the corpuscle film on the gate insulating film of FET by using a mask with a window in a fixed shape.
CONSTITUTION: On semiconductor layer 1 of one conductive type, source region 2 and drain region 3 of FET are formed and gate insulating film 5 is formed between the both. Next, lead-out electrodes 6 and 7 from regions equivalent to the source and drain are selectively formed. Then, vapor-deposition mask 9 close to or in contact with lead-out electrodes 6 and 7 is arranged covering at least the upper parts of lead-out electrode parts 6 and 7 while exposing at least the upper part of gate insulating film part 5 and corpuscles are vapor-deposited to form corpuscle film 11.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10372178A JPS5529783A (en) | 1978-08-24 | 1978-08-24 | Manufacture of semiconductor detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10372178A JPS5529783A (en) | 1978-08-24 | 1978-08-24 | Manufacture of semiconductor detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5529783A true JPS5529783A (en) | 1980-03-03 |
Family
ID=14361539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10372178A Pending JPS5529783A (en) | 1978-08-24 | 1978-08-24 | Manufacture of semiconductor detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5529783A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6246170U (en) * | 1985-09-09 | 1987-03-20 |
-
1978
- 1978-08-24 JP JP10372178A patent/JPS5529783A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6246170U (en) * | 1985-09-09 | 1987-03-20 | ||
JPH0239640Y2 (en) * | 1985-09-09 | 1990-10-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2016803A (en) | Thin film transistor construction and manufacturing method of the same | |
JPS5529783A (en) | Manufacture of semiconductor detector | |
JPS5399879A (en) | Junction-type field effect thyristor | |
JPS6453476A (en) | Superconducting three-terminal element and manufacture thereof | |
JPS5643768A (en) | Fet transistor and method of producing the same | |
JPS5713769A (en) | Semiconductor device and manufacture thereof | |
JPS5552262A (en) | Mos semiconductor device | |
JPS54117691A (en) | Production of insulating gate-type semiconductor device | |
JPS56100473A (en) | Semiconductor device | |
JPS52100877A (en) | Field effect transistor of junction type | |
JPS6450465A (en) | Semiconductor device | |
JPS5718363A (en) | Msis type semiconductor element | |
JPS5779670A (en) | Manufacture of semiconductor device | |
JPS53100779A (en) | Production of insulated gate type semiconductor device | |
JPS5376770A (en) | Production of insulated gate field effect transistor | |
JPS53145485A (en) | Production of semiconductor device having serrations on semiconductor surface | |
JPS5544725A (en) | Semiconductor device and its manufacture | |
JPS57166077A (en) | Semiconductor device and manufacture thereof | |
JPS5412566A (en) | Production of semiconductor device | |
JPS5591183A (en) | Manufacture of semiconductor device | |
JPS57133681A (en) | Field-effect semiconductor device | |
JPS6417475A (en) | Manufacture of mos semiconductor device | |
JPS5354968A (en) | Semiconductor device | |
JPS55146987A (en) | Manufacture of tunnel junction type josephson element | |
JPS5371573A (en) | Field effect transistor of isolating gate type |