JPS5552256A - Semicondutor memory - Google Patents
Semicondutor memoryInfo
- Publication number
- JPS5552256A JPS5552256A JP12557378A JP12557378A JPS5552256A JP S5552256 A JPS5552256 A JP S5552256A JP 12557378 A JP12557378 A JP 12557378A JP 12557378 A JP12557378 A JP 12557378A JP S5552256 A JPS5552256 A JP S5552256A
- Authority
- JP
- Japan
- Prior art keywords
- type
- base
- bases
- transistors
- adjoining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
PURPOSE:To restrict parasitic thyristor effect thereby securing memory by providing a high-impurity region whose conductive direction is the opposite to a base of P- ROM that is made by shortcircuiting due to a selective destruction of a base-emitter junction in a bipolar transistor. CONSTITUTION:Two or more P-type bases are formed in an N-type epitaxial layer 3 being provided on a P-type semiconductor substrate 1, then an N-type emitter is formed in each base to compose two or more NPN transistors which share the N- type layer 3 as a common collector. A P-type separation region 4 separates a transistor used for a peripheral circuit E1-B1-C1 from transistors used for memory elements. Then an N-type high-impurity channel stopper 5 is installed on the N-type collector between the adjoining two P-type bases B2, B3 of the transistors used for memory elements E2-B2-C1, E3-B3-C2. By so doing, current increase rate between the two adjoining bases in parasitic lateral transistors is reduced, thereby preventing the parasitic thyristor effect.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12557378A JPS5552256A (en) | 1978-10-11 | 1978-10-11 | Semicondutor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12557378A JPS5552256A (en) | 1978-10-11 | 1978-10-11 | Semicondutor memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5552256A true JPS5552256A (en) | 1980-04-16 |
Family
ID=14913520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12557378A Pending JPS5552256A (en) | 1978-10-11 | 1978-10-11 | Semicondutor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5552256A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0072209A2 (en) * | 1981-08-08 | 1983-02-16 | Fujitsu Limited | Junction short-circuiting-type programmable read-only memory device |
US5661047A (en) * | 1994-10-05 | 1997-08-26 | United Microelectronics Corporation | Method for forming bipolar ROM device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5375786A (en) * | 1976-12-17 | 1978-07-05 | Fujitsu Ltd | Semiconductor device |
-
1978
- 1978-10-11 JP JP12557378A patent/JPS5552256A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5375786A (en) * | 1976-12-17 | 1978-07-05 | Fujitsu Ltd | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0072209A2 (en) * | 1981-08-08 | 1983-02-16 | Fujitsu Limited | Junction short-circuiting-type programmable read-only memory device |
US5661047A (en) * | 1994-10-05 | 1997-08-26 | United Microelectronics Corporation | Method for forming bipolar ROM device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1197403A (en) | Improvements relating to Semiconductor Devices | |
GB1470211A (en) | Semiconductor devices | |
GB1046152A (en) | Diode structure in semiconductor integrated circuit and method of making same | |
GB1460037A (en) | Semiconductor devices | |
GB1533156A (en) | Semiconductor integrated circuits | |
GB1279917A (en) | Improvements in or relating to integrated circuits which have a multiple emitter transistor | |
JPS5552256A (en) | Semicondutor memory | |
GB1337906A (en) | Integrated semiconductor structure | |
GB1455260A (en) | Semiconductor devices | |
ES2030389T3 (en) | MANUFACTURING PROCESS OF INTEGRATED CIRCUITS TO FORM A BIPOLAR TRANSISTOR PROVIDED WITH EXTRINSIC BASE REGIONS. | |
JPS5552255A (en) | Semiconductor memory | |
GB1292667A (en) | Improvements in or relating to semiconductor devices and to methods of making them | |
GB1496306A (en) | Semiconductor integrated circuit including an epitaxial base type vertical transistor | |
GB1433667A (en) | Bipolar transistors | |
GB1007952A (en) | Improvements in and relating to semi-conductor devices | |
GB1319037A (en) | Transistors | |
GB1177694A (en) | Improvements in or Relating to Transistors | |
JPS5533007A (en) | Semiconductor intergated circuit | |
GB1173880A (en) | Semiconductor Devices | |
GB1241809A (en) | A method for manufacturing a semiconductor device | |
JPS6393154A (en) | Semiconductor device | |
GB1324972A (en) | Semiconductor integrated circuit drive | |
GB1352044A (en) | Planar semiconductor device | |
JPH04262569A (en) | Semiconductor device | |
JPH0695535B2 (en) | Semiconductor device |