GB1352044A - Planar semiconductor device - Google Patents

Planar semiconductor device

Info

Publication number
GB1352044A
GB1352044A GB1352044DA GB1352044A GB 1352044 A GB1352044 A GB 1352044A GB 1352044D A GB1352044D A GB 1352044DA GB 1352044 A GB1352044 A GB 1352044A
Authority
GB
United Kingdom
Prior art keywords
island
semi
semiconductor device
substrate
planar semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Garyainov S A Glazkov I M Raik
Original Assignee
Garyainov S A Glazkov I M Raik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Garyainov S A Glazkov I M Raik filed Critical Garyainov S A Glazkov I M Raik
Publication of GB1352044A publication Critical patent/GB1352044A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Abstract

1352044 Semi-conductor devices S A GARYAINOV I M GLAZKOV Y A RAIKHMAN and V G RZHANOV 21 April 1971 10379/71 Heading H1K A planar semi-conductor device formed in a monocrystalline island 2 separated from an insulating substrate 1, e.g. of glass-ceramic, by an insulating layer 3 includes a pn junction 6, 7 extending throughout the depth of the island 2 substantially at right angles to the surface of the substrate 1. In the Si lateral bipolar transistor shown the island 2 has four contact-bearing wings, two of which contain the diffused emitter and collector regions 4, 5 respectively. A similar construction is used for a thyristor, and diodes and MOS transistors are also described. Ge or GaAs may be used as alternatives to Si.
GB1352044D 1971-04-21 1971-04-21 Planar semiconductor device Expired GB1352044A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1037971 1971-04-21

Publications (1)

Publication Number Publication Date
GB1352044A true GB1352044A (en) 1974-05-15

Family

ID=9966759

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1352044D Expired GB1352044A (en) 1971-04-21 1971-04-21 Planar semiconductor device

Country Status (1)

Country Link
GB (1) GB1352044A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045848A1 (en) * 1980-08-08 1982-02-17 International Business Machines Corporation Planar semiconductor integrated circuits including improved bipolar transistor structures and method of fabricating such circuits
EP0052038A2 (en) * 1980-10-23 1982-05-19 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Method of fabricating integrated circuit structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045848A1 (en) * 1980-08-08 1982-02-17 International Business Machines Corporation Planar semiconductor integrated circuits including improved bipolar transistor structures and method of fabricating such circuits
EP0052038A2 (en) * 1980-10-23 1982-05-19 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Method of fabricating integrated circuit structure
EP0052038A3 (en) * 1980-10-23 1983-01-12 Fairchild Camera & Instrument Corporation Lateral transistor and method for its manufacture

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee