GB1270214A - Improvements in or relating to stabilised semiconductor components - Google Patents

Improvements in or relating to stabilised semiconductor components

Info

Publication number
GB1270214A
GB1270214A GB1892170A GB1892170A GB1270214A GB 1270214 A GB1270214 A GB 1270214A GB 1892170 A GB1892170 A GB 1892170A GB 1892170 A GB1892170 A GB 1892170A GB 1270214 A GB1270214 A GB 1270214A
Authority
GB
United Kingdom
Prior art keywords
passivation
electrode
april
relating
semiconductor components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1892170A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1270214A publication Critical patent/GB1270214A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

1,270,214. Semi-conductor devices. SIEMENS A.G. 21 April, 1970 [22 April, 1969], No. 18921/70. Heading H1K. The base electrode 4 of the transistor shown extends on the passivation 6, 9 over the collector-base junction. An isolated electrode 8 extends on the passivation at the inward edge of the ring 7 of enhanced conductivity formed in the collector region 3. The passivation consists of a silicon dioxide layer 6 from which impurities are gathered by a mixed silicon dioxidephosphorus pentoxide layer 9. The electrode extensions exert a charge control effect on the underlying semi-conductor.
GB1892170A 1969-04-22 1970-04-21 Improvements in or relating to stabilised semiconductor components Expired GB1270214A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691920397 DE1920397A1 (en) 1969-04-22 1969-04-22 Stabilized semiconductor component

Publications (1)

Publication Number Publication Date
GB1270214A true GB1270214A (en) 1972-04-12

Family

ID=5731933

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1892170A Expired GB1270214A (en) 1969-04-22 1970-04-21 Improvements in or relating to stabilised semiconductor components

Country Status (7)

Country Link
AT (1) AT316652B (en)
CH (1) CH501311A (en)
DE (1) DE1920397A1 (en)
FR (1) FR2039343B1 (en)
GB (1) GB1270214A (en)
NL (1) NL7002197A (en)
SE (1) SE366871B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332499A (en) * 2013-07-22 2015-02-04 北大方正集团有限公司 VDMOS device and method for forming terminal structure thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5218070B2 (en) * 1972-10-04 1977-05-19
DE3220250A1 (en) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München SEMICONDUCTOR COMPONENT WITH PLANAR STRUCTURE
GB2193596A (en) * 1986-08-08 1988-02-10 Philips Electronic Associated A semiconductor diode
DE58907758D1 (en) * 1988-09-20 1994-07-07 Siemens Ag Planar pn junction with high dielectric strength.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343049A (en) * 1964-06-18 1967-09-19 Ibm Semiconductor devices and passivation thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332499A (en) * 2013-07-22 2015-02-04 北大方正集团有限公司 VDMOS device and method for forming terminal structure thereof

Also Published As

Publication number Publication date
DE1920397A1 (en) 1970-11-12
CH501311A (en) 1970-12-31
NL7002197A (en) 1970-10-26
AT316652B (en) 1974-07-25
FR2039343B1 (en) 1975-01-10
SE366871B (en) 1974-05-06
FR2039343A1 (en) 1971-01-15

Similar Documents

Publication Publication Date Title
GB954947A (en) Surface-potential controlled semiconductor device
GB1197403A (en) Improvements relating to Semiconductor Devices
GB1155578A (en) Field Effect Transistor
GB988903A (en) Semiconductor devices and methods of making same
GB1133634A (en) Improvements in or relating to semiconductor voltage-dependent capacitors
GB1012124A (en) Improvements in or relating to semiconductor devices
GB1148417A (en) Integrated circuit structures including controlled rectifiers or their structural equivalents and method of making the same
ES379290A1 (en) Camera tube target with projecting p-type regions separated by grooves covered with silicon oxide layer approximately one-seventh groove depth
GB1109371A (en) Metal-oxide-semiconductor field effect transistor
GB1270214A (en) Improvements in or relating to stabilised semiconductor components
JPS5240071A (en) Semiconductor device
GB1152156A (en) Semiconductor Devices
GB1472113A (en) Semiconductor device circuits
GB1076371A (en) Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction
GB1039915A (en) Improvements in or relating to semiconductor devices
GB1106787A (en) Improvements in semiconductor devices
GB1477514A (en) Semiconductor devices
GB1245765A (en) Surface diffused semiconductor devices
SE7614145L (en) HYBRID OXIDE PREPARATION
GB1305471A (en)
GB1531735A (en) Bipolar logic circuits
GB1503570A (en) Semiconductor devices
GB1433667A (en) Bipolar transistors
JPS5588378A (en) Semiconductor device
JPS5220769A (en) Longitudinal semi-conductor unit