GB1531735A - Bipolar logic circuits - Google Patents

Bipolar logic circuits

Info

Publication number
GB1531735A
GB1531735A GB3735275A GB3735275A GB1531735A GB 1531735 A GB1531735 A GB 1531735A GB 3735275 A GB3735275 A GB 3735275A GB 3735275 A GB3735275 A GB 3735275A GB 1531735 A GB1531735 A GB 1531735A
Authority
GB
United Kingdom
Prior art keywords
collector
transistor
lateral
region
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3735275A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1531735A publication Critical patent/GB1531735A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

1531735 Integrated circuits SIEMENS AG 11 Sept 1975 [30 Sept 1974] 37352/75 Heading H1K A bipolar logic circuit comprises, in an epitaxial layer 4 on a semi-conductor substrate, a lateral bipolar transistor 1, a collector region 15 of which also constitutes the base region of an inwardly-operated vertical bipolar transistor 2. The epitaxial layer 4 itself constitutes the base 12 of the lateral transistor 1 and the emitter 23 of the vertical transistor 2, and is preferably earthed, the emitter region 11 of the lateral transistor 1 being connected to a voltage supply line. The vertical transistor 2 has at least two collector regions 21, 22 which provide the outputs from the circuit. The lateral transistor 1 has, in addition to the "output" collector 15, two "control" collectors 13, 14 located between the collector 15 and the emitter 11 and forming the circuit inputs. If a buried layer is present below the epitaxial layer 4 the regions 11, 13, 14 and 15 do not extend down to nest it. Two preferably earthed auxiliary collector regions 6 alongside the transistors 1, 2 serve to withdraw excess charge carriers. In a modification (Figs. 3 and 4, not shown) the collectors 14, 15 of the lateral transistor are combined as a single region. In a further modification of the Fig. 2 embodiment the collector 13 may be omitted and replaced by a further collector alongside the collector 14.
GB3735275A 1974-09-30 1975-09-11 Bipolar logic circuits Expired GB1531735A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742446649 DE2446649A1 (en) 1974-09-30 1974-09-30 BIPOLAR LOGIC CIRCUIT

Publications (1)

Publication Number Publication Date
GB1531735A true GB1531735A (en) 1978-11-08

Family

ID=5927133

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3735275A Expired GB1531735A (en) 1974-09-30 1975-09-11 Bipolar logic circuits

Country Status (8)

Country Link
JP (1) JPS5910068B2 (en)
BE (1) BE833958A (en)
CA (1) CA1040319A (en)
DE (1) DE2446649A1 (en)
FR (1) FR2286557A1 (en)
GB (1) GB1531735A (en)
IT (1) IT1042857B (en)
NL (1) NL7511516A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2509530C2 (en) * 1975-03-05 1985-05-23 Ibm Deutschland Gmbh, 7000 Stuttgart Semiconductor arrangement for the basic building blocks of a highly integrable logic semiconductor circuit concept based on multiple collector reversing transistors
DE2652103C2 (en) * 1976-11-16 1982-10-28 Ibm Deutschland Gmbh, 7000 Stuttgart Integrated semiconductor arrangement for a logical circuit concept and method for their production
US4199776A (en) * 1978-08-24 1980-04-22 Rca Corporation Integrated injection logic with floating reinjectors
JPS6255688A (en) * 1985-09-04 1987-03-11 茨城トヨペット株式会社 Car driving training apparatus

Also Published As

Publication number Publication date
IT1042857B (en) 1980-01-30
JPS5161260A (en) 1976-05-27
FR2286557B1 (en) 1980-04-18
BE833958A (en) 1976-01-16
NL7511516A (en) 1976-04-01
DE2446649A1 (en) 1976-04-15
FR2286557A1 (en) 1976-04-23
JPS5910068B2 (en) 1984-03-06
CA1040319A (en) 1978-10-10

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee