GB1399526A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1399526A
GB1399526A GB2792872A GB2792872A GB1399526A GB 1399526 A GB1399526 A GB 1399526A GB 2792872 A GB2792872 A GB 2792872A GB 2792872 A GB2792872 A GB 2792872A GB 1399526 A GB1399526 A GB 1399526A
Authority
GB
United Kingdom
Prior art keywords
grooves
regions
diffused
june
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2792872A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Transistor AG
Original Assignee
Transistor AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Transistor AG filed Critical Transistor AG
Publication of GB1399526A publication Critical patent/GB1399526A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

1399526 Semi-conductor devices TRANSISTOR AG 15 June 1972 [18 June 1971] 27928/72 Heading H1K A p-n junction 12 adjacent a major surface of a semi-conductor body 1 is intercepted by an elongate parallel grooves 9, 10, 11 which respectively surround a part A of the surface containing the main region of the device and auxiliary regions 7, 8 of the device, In the Si thyristor shown the frunction of the axuiliary regions 7, 8 is to reduce the deleterious effects of the surface on the characteristics of the blocking junctions 13. The regions 7, 8 are initially parts of a Ga-diffused p type layer 3 formed in the n type body 1, a similar layer 14 being provided at the opposite surface of the device. Grooves 9<SP>1</SP>-11<SP>1</SP> are also formed at the opposite surface. A P-diffused n type emitter region 5 is provided in the main part A of the upper surface. The grooves 9-11, 9<SP>1</SP>-11<SP>1</SP> are formed by etching and are preferably lined with glass 12. The grooves 11, 11<SP>1</SP> may be used to define the separation lines between a plurality of chips formed in a common wafer. Diodes, triacs and high voltage transistors are also mentioned.
GB2792872A 1971-06-18 1972-06-15 Semiconductor device Expired GB1399526A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH897971A CH517379A (en) 1971-06-18 1971-06-18 Semiconductor device

Publications (1)

Publication Number Publication Date
GB1399526A true GB1399526A (en) 1975-07-02

Family

ID=4346975

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2792872A Expired GB1399526A (en) 1971-06-18 1972-06-15 Semiconductor device

Country Status (3)

Country Link
CH (1) CH517379A (en)
DE (1) DE2229260A1 (en)
GB (1) GB1399526A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2176338A (en) * 1985-06-06 1986-12-17 Marconi Electronic Devices Edge contouring in a semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499845A (en) * 1975-03-26 1978-02-01 Mullard Ltd Thyristors
FR2579023B1 (en) * 1985-03-12 1988-06-24 Silicium Semiconducteur Ssc SEMICONDUCTOR COMPONENT HAVING IMPROVED VOLTAGE HOLDING BY MULTIPLE PERIPHERAL GROOVES

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2176338A (en) * 1985-06-06 1986-12-17 Marconi Electronic Devices Edge contouring in a semiconductor device

Also Published As

Publication number Publication date
CH517379A (en) 1971-12-31
DE2229260A1 (en) 1972-12-21

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee