JPS57198665A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57198665A JPS57198665A JP8402281A JP8402281A JPS57198665A JP S57198665 A JPS57198665 A JP S57198665A JP 8402281 A JP8402281 A JP 8402281A JP 8402281 A JP8402281 A JP 8402281A JP S57198665 A JPS57198665 A JP S57198665A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- layer
- island
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 230000003321 amplification Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Abstract
PURPOSE:To avoid the decrease in current amplification factor of a transistor, by providing two reverse conductive type island regions on one conductive type semiconductor substrate, providing an N-P-N transistor in one island region, and providing two Zener diodes in the part between two island regions in the substrate so that one conductive region and the reverse conductive region are overlapped. CONSTITUTION:An N<+> type embedded layer 303 is diffused and formed in the P type Si substrate 301. An N type layer 302 is epitaxially grown on the entire surface including the layer 303. The layer 302 is divided into one island region including the embedded layer 303 and the other island region that does not include the layer 303, by a P<+> type region 304 which is continued from the substrate 301. Then, a P type base region 305 is diffused and formed in the island region including the layer 303, an N type emitter region 306 is provided therein, and the N-P-N transistor Tr is constituted. In the region 304 between the two island regions, an N<+> type region 307 and a P<-> type region 308, part of which is overlapped with the region 307, are diffused and formed. The Zener diode DZ3 is constituted by the region 307 and 308, and the Zener diode DZ4 is constituted by the regions 307 and 304.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8402281A JPS57198665A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8402281A JPS57198665A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57198665A true JPS57198665A (en) | 1982-12-06 |
Family
ID=13818935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8402281A Pending JPS57198665A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57198665A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5936288A (en) * | 1997-07-08 | 1999-08-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device and low breakdown voltage zener diode |
-
1981
- 1981-06-01 JP JP8402281A patent/JPS57198665A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5936288A (en) * | 1997-07-08 | 1999-08-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device and low breakdown voltage zener diode |
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