GB1452805A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- GB1452805A GB1452805A GB1376974A GB1376974A GB1452805A GB 1452805 A GB1452805 A GB 1452805A GB 1376974 A GB1376974 A GB 1376974A GB 1376974 A GB1376974 A GB 1376974A GB 1452805 A GB1452805 A GB 1452805A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- thick
- channel
- source
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 239000005360 phosphosilicate glass Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910017767 Cu—Al Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
1452805 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 28 March 1974 [3 May 1973] 13769/74 Heading H1K An FET includes a body 4 of a monocrystalline semi-conductor having source, drain 10, 11 and channel regions adjacent a surface of the body 4, a thick layer 6, 8 of insulating material over the source and drain regions 10, 11, a thin layer 16, 18 of insulation over the channel region, the thick layer 6, 8 including means for trapping ionic contaminants, and the thin layer including silicon dioxide 18 adjacent the channel and phosphosilicate glass 16 remote from the channel, and a gate electrode 20 completely covering the thin insulating layer 16, 18 and extending over a portion of the thick insulating layer 6, 8 adjacent the thin layer 16, 18. The layer 18 is 500-750 Š thick and the layer 16 90-130 Š thick and has a phosphorus concentration of about 4À5 mole per cent. The layers 6, 8 are also respectively silicon oxide and phosphosilicate glass. The semi-conductor body 4 is silicon in the (100) crystallographic orientation and the source and drain regions 10, 11 and a contact region 12 are formed by diffusion of phosphorus. The device has a quartz coating and the electrode material may be a Cu-Al alloy, polySi doped with P, or Mo.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35704673A | 1973-05-03 | 1973-05-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1452805A true GB1452805A (en) | 1976-10-20 |
Family
ID=23404079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1376974A Expired GB1452805A (en) | 1973-05-03 | 1974-03-28 | Field effect transistor |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS522272B2 (en) |
| CA (1) | CA1017462A (en) |
| DE (1) | DE2419704A1 (en) |
| FR (1) | FR2228301B1 (en) |
| GB (1) | GB1452805A (en) |
| IT (1) | IT1006474B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140345939A1 (en) * | 2012-03-05 | 2014-11-27 | Murata Manufacturing Co., Ltd. | Joining method, method for producing electronic device and electronic part |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI396686B (en) | 2004-05-21 | 2013-05-21 | Takeda Pharmaceutical | Cyclic amide derivative, and its production and use |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1053069A (en) * | 1963-06-28 | |||
| US3528168A (en) * | 1967-09-26 | 1970-09-15 | Texas Instruments Inc | Method of making a semiconductor device |
| US3632438A (en) * | 1967-09-29 | 1972-01-04 | Texas Instruments Inc | Method for increasing the stability of semiconductor devices |
-
1974
- 1974-03-19 FR FR7410669A patent/FR2228301B1/fr not_active Expired
- 1974-03-28 GB GB1376974A patent/GB1452805A/en not_active Expired
- 1974-04-03 JP JP49037069A patent/JPS522272B2/ja not_active Expired
- 1974-04-17 IT IT2150474A patent/IT1006474B/en active
- 1974-04-24 DE DE19742419704 patent/DE2419704A1/en not_active Withdrawn
- 1974-05-02 CA CA198,773A patent/CA1017462A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140345939A1 (en) * | 2012-03-05 | 2014-11-27 | Murata Manufacturing Co., Ltd. | Joining method, method for producing electronic device and electronic part |
| US9409247B2 (en) * | 2012-03-05 | 2016-08-09 | Murata Manufacturing Co., Ltd. | Joining method, method for producing electronic device and electronic part |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2228301B1 (en) | 1977-10-14 |
| DE2419704A1 (en) | 1974-11-21 |
| FR2228301A1 (en) | 1974-11-29 |
| IT1006474B (en) | 1976-09-30 |
| CA1017462A (en) | 1977-09-13 |
| JPS5011391A (en) | 1975-02-05 |
| JPS522272B2 (en) | 1977-01-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |