CA1017462A - Reliable mosfet device and method for making same - Google Patents

Reliable mosfet device and method for making same

Info

Publication number
CA1017462A
CA1017462A CA198,773A CA198773A CA1017462A CA 1017462 A CA1017462 A CA 1017462A CA 198773 A CA198773 A CA 198773A CA 1017462 A CA1017462 A CA 1017462A
Authority
CA
Canada
Prior art keywords
making same
mosfet device
reliable mosfet
reliable
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA198,773A
Other versions
CA198773S (en
Inventor
William D. North
Gerald R. Parker
Gerald D. O'rourke
Robert H. Collins
Richard F. Levine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1017462A publication Critical patent/CA1017462A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51Insulating materials associated therewith
    • H01L29/511Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51Insulating materials associated therewith
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
CA198,773A 1973-05-03 1974-05-02 Reliable mosfet device and method for making same Expired CA1017462A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35704673A 1973-05-03 1973-05-03

Publications (1)

Publication Number Publication Date
CA1017462A true CA1017462A (en) 1977-09-13

Family

ID=23404079

Family Applications (1)

Application Number Title Priority Date Filing Date
CA198,773A Expired CA1017462A (en) 1973-05-03 1974-05-02 Reliable mosfet device and method for making same

Country Status (6)

Country Link
JP (1) JPS522272B2 (en)
CA (1) CA1017462A (en)
DE (1) DE2419704A1 (en)
FR (1) FR2228301B1 (en)
GB (1) GB1452805A (en)
IT (1) IT1006474B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI396686B (en) * 2004-05-21 2013-05-21 Takeda Pharmaceutical Cyclic amide derivative, and its production and use
WO2013132953A1 (en) * 2012-03-05 2013-09-12 株式会社村田製作所 Bonding method, electronic device manufacturing method, and electronic component

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053069A (en) * 1963-06-28
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
US3632438A (en) * 1967-09-29 1972-01-04 Texas Instruments Inc Method for increasing the stability of semiconductor devices

Also Published As

Publication number Publication date
DE2419704A1 (en) 1974-11-21
FR2228301A1 (en) 1974-11-29
IT1006474B (en) 1976-09-30
JPS522272B2 (en) 1977-01-20
GB1452805A (en) 1976-10-20
FR2228301B1 (en) 1977-10-14
JPS5011391A (en) 1975-02-05

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