IT1006474B - IMPROVED FIELD EFFECT TRANSISTOR AND RELATED MANUFACTURING PROCEDURE - Google Patents
IMPROVED FIELD EFFECT TRANSISTOR AND RELATED MANUFACTURING PROCEDUREInfo
- Publication number
- IT1006474B IT1006474B IT21504/74A IT2150474A IT1006474B IT 1006474 B IT1006474 B IT 1006474B IT 21504/74 A IT21504/74 A IT 21504/74A IT 2150474 A IT2150474 A IT 2150474A IT 1006474 B IT1006474 B IT 1006474B
- Authority
- IT
- Italy
- Prior art keywords
- field effect
- effect transistor
- manufacturing procedure
- related manufacturing
- improved field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
- H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35704673A | 1973-05-03 | 1973-05-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1006474B true IT1006474B (en) | 1976-09-30 |
Family
ID=23404079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT21504/74A IT1006474B (en) | 1973-05-03 | 1974-04-17 | IMPROVED FIELD EFFECT TRANSISTOR AND RELATED MANUFACTURING PROCEDURE |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS522272B2 (en) |
| CA (1) | CA1017462A (en) |
| DE (1) | DE2419704A1 (en) |
| FR (1) | FR2228301B1 (en) |
| GB (1) | GB1452805A (en) |
| IT (1) | IT1006474B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI396686B (en) | 2004-05-21 | 2013-05-21 | Takeda Pharmaceutical | Cyclic guanamine derivatives, as well as their products and usage |
| JP5943065B2 (en) * | 2012-03-05 | 2016-06-29 | 株式会社村田製作所 | Bonding method, electronic device manufacturing method, and electronic component |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1053069A (en) * | 1963-06-28 | |||
| US3528168A (en) * | 1967-09-26 | 1970-09-15 | Texas Instruments Inc | Method of making a semiconductor device |
| US3632438A (en) * | 1967-09-29 | 1972-01-04 | Texas Instruments Inc | Method for increasing the stability of semiconductor devices |
-
1974
- 1974-03-19 FR FR7410669A patent/FR2228301B1/fr not_active Expired
- 1974-03-28 GB GB1376974A patent/GB1452805A/en not_active Expired
- 1974-04-03 JP JP49037069A patent/JPS522272B2/ja not_active Expired
- 1974-04-17 IT IT21504/74A patent/IT1006474B/en active
- 1974-04-24 DE DE2419704A patent/DE2419704A1/en not_active Withdrawn
- 1974-05-02 CA CA198,773A patent/CA1017462A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1452805A (en) | 1976-10-20 |
| JPS5011391A (en) | 1975-02-05 |
| FR2228301A1 (en) | 1974-11-29 |
| JPS522272B2 (en) | 1977-01-20 |
| CA1017462A (en) | 1977-09-13 |
| DE2419704A1 (en) | 1974-11-21 |
| FR2228301B1 (en) | 1977-10-14 |
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