IT993383B - CONTROLLED JUNCTION FIELD EFFECT TRANSISTOR - Google Patents

CONTROLLED JUNCTION FIELD EFFECT TRANSISTOR

Info

Publication number
IT993383B
IT993383B IT2926973A IT2926973A IT993383B IT 993383 B IT993383 B IT 993383B IT 2926973 A IT2926973 A IT 2926973A IT 2926973 A IT2926973 A IT 2926973A IT 993383 B IT993383 B IT 993383B
Authority
IT
Italy
Prior art keywords
field effect
effect transistor
junction field
controlled junction
controlled
Prior art date
Application number
IT2926973A
Other languages
Italian (it)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT993383B publication Critical patent/IT993383B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/7722Field effect transistors using static field induced regions, e.g. SIT, PBT
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
IT2926973A 1973-04-25 1973-09-24 CONTROLLED JUNCTION FIELD EFFECT TRANSISTOR IT993383B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4744573A JPS49134282A (en) 1973-04-25 1973-04-25

Publications (1)

Publication Number Publication Date
IT993383B true IT993383B (en) 1975-09-30

Family

ID=12775330

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2926973A IT993383B (en) 1973-04-25 1973-09-24 CONTROLLED JUNCTION FIELD EFFECT TRANSISTOR

Country Status (7)

Country Link
JP (1) JPS49134282A (en)
CA (1) CA993567A (en)
DE (1) DE2339444C2 (en)
FR (1) FR2227645B1 (en)
GB (1) GB1412904A (en)
IT (1) IT993383B (en)
NL (1) NL7312535A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2503800C2 (en) * 1975-01-30 1984-02-16 Sony Corp., Tokyo Junction field effect transistor
JPS51129184A (en) * 1975-05-02 1976-11-10 Nec Corp Vertical type field efect transistor
JPS5342683A (en) * 1976-09-30 1978-04-18 Mitsubishi Electric Corp Vertical field effect transistor
JPS5846874B2 (en) * 1977-04-27 1983-10-19 三菱電機株式会社 Junction field effect transistor
JPS5680172A (en) * 1979-12-04 1981-07-01 Seiko Epson Corp Semiconductor device
FR2480505A1 (en) * 1980-04-14 1981-10-16 Thomson Csf VERTICALLY OPERATED POWER JUNCTION FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
FR2480502A1 (en) * 1980-04-14 1981-10-16 Thomson Csf DEEP GRID SEMICONDUCTOR DEVICE, ITS APPLICATION TO A BLOCKABLE DIODE, AND MANUFACTURING METHOD

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539877A1 (en) * 1965-11-19 1969-12-11 Itt Ind Gmbh Deutsche Switchable semiconductor component
FR2147883B1 (en) * 1971-08-05 1977-01-28 Teszner Stanislas

Also Published As

Publication number Publication date
DE2339444C2 (en) 1985-05-15
NL7312535A (en) 1974-10-29
DE2339444A1 (en) 1974-10-31
CA993567A (en) 1976-07-20
JPS49134282A (en) 1974-12-24
FR2227645B1 (en) 1977-08-05
GB1412904A (en) 1975-11-05
FR2227645A1 (en) 1974-11-22

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