JPS49134282A - - Google Patents

Info

Publication number
JPS49134282A
JPS49134282A JP4744573A JP4744573A JPS49134282A JP S49134282 A JPS49134282 A JP S49134282A JP 4744573 A JP4744573 A JP 4744573A JP 4744573 A JP4744573 A JP 4744573A JP S49134282 A JPS49134282 A JP S49134282A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4744573A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4744573A priority Critical patent/JPS49134282A/ja
Priority to GB3662573A priority patent/GB1412904A/en
Priority to DE19732339444 priority patent/DE2339444C2/de
Priority to FR7330927A priority patent/FR2227645B1/fr
Priority to NL7312535A priority patent/NL7312535A/xx
Priority to IT2926973A priority patent/IT993383B/it
Priority to CA188,102A priority patent/CA993567A/en
Publication of JPS49134282A publication Critical patent/JPS49134282A/ja
Priority to US05/542,377 priority patent/US3977017A/en
Priority to US05/544,508 priority patent/US3982264A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP4744573A 1973-04-25 1973-04-25 Pending JPS49134282A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP4744573A JPS49134282A (ja) 1973-04-25 1973-04-25
GB3662573A GB1412904A (en) 1973-04-25 1973-08-01 Juncttion gated field effect transistors
DE19732339444 DE2339444C2 (de) 1973-04-25 1973-08-03 Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors
FR7330927A FR2227645B1 (ja) 1973-04-25 1973-08-27
NL7312535A NL7312535A (ja) 1973-04-25 1973-09-11
IT2926973A IT993383B (it) 1973-04-25 1973-09-24 Transistore ad effetto di campo a giunzione di tipo controllato
CA188,102A CA993567A (en) 1973-04-25 1973-12-13 Junction gated field effect transistor
US05/542,377 US3977017A (en) 1973-04-25 1975-01-20 Multi-channel junction gated field effect transistor and method of making same
US05/544,508 US3982264A (en) 1973-04-25 1975-01-27 Junction gated field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4744573A JPS49134282A (ja) 1973-04-25 1973-04-25

Publications (1)

Publication Number Publication Date
JPS49134282A true JPS49134282A (ja) 1974-12-24

Family

ID=12775330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4744573A Pending JPS49134282A (ja) 1973-04-25 1973-04-25

Country Status (7)

Country Link
JP (1) JPS49134282A (ja)
CA (1) CA993567A (ja)
DE (1) DE2339444C2 (ja)
FR (1) FR2227645B1 (ja)
GB (1) GB1412904A (ja)
IT (1) IT993383B (ja)
NL (1) NL7312535A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129184A (en) * 1975-05-02 1976-11-10 Nec Corp Vertical type field efect transistor
JPS5342683A (en) * 1976-09-30 1978-04-18 Mitsubishi Electric Corp Vertical field effect transistor
JPS5680172A (en) * 1979-12-04 1981-07-01 Seiko Epson Corp Semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2503800C2 (de) * 1975-01-30 1984-02-16 Sony Corp., Tokyo Sperrschicht-Feldeffekttransistor
JPS5846874B2 (ja) * 1977-04-27 1983-10-19 三菱電機株式会社 接合型電界効果トランジスタ
FR2480505A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication
FR2480502A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539877A1 (de) * 1965-11-19 1969-12-11 Itt Ind Gmbh Deutsche Schaltbares Halbleiterbauelement
FR2147883B1 (ja) * 1971-08-05 1977-01-28 Teszner Stanislas

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129184A (en) * 1975-05-02 1976-11-10 Nec Corp Vertical type field efect transistor
JPS5342683A (en) * 1976-09-30 1978-04-18 Mitsubishi Electric Corp Vertical field effect transistor
JPS5680172A (en) * 1979-12-04 1981-07-01 Seiko Epson Corp Semiconductor device

Also Published As

Publication number Publication date
FR2227645A1 (ja) 1974-11-22
GB1412904A (en) 1975-11-05
CA993567A (en) 1976-07-20
IT993383B (it) 1975-09-30
DE2339444C2 (de) 1985-05-15
NL7312535A (ja) 1974-10-29
FR2227645B1 (ja) 1977-08-05
DE2339444A1 (de) 1974-10-31

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