GB1412904A - Juncttion gated field effect transistors - Google Patents
Juncttion gated field effect transistorsInfo
- Publication number
- GB1412904A GB1412904A GB3662573A GB3662573A GB1412904A GB 1412904 A GB1412904 A GB 1412904A GB 3662573 A GB3662573 A GB 3662573A GB 3662573 A GB3662573 A GB 3662573A GB 1412904 A GB1412904 A GB 1412904A
- Authority
- GB
- United Kingdom
- Prior art keywords
- mesh
- insulation
- layer
- gate region
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Abstract
1412904 Semiconductor devices SONY CORP 1 Aug 1973 [25 April 1973] 36625/73 Heading H1K The mesh-shaped gate region 15 of a junctiongate f.e.t. is covered by a correspondingly shaped insulating layer 16 which surrounds discrete highly-doped source regions 17 in the holes of the mesh. The regions 17 are interconnected by a common source electrode 20 overlying the insulation 16. The p<SP>+</SP> gate region 15 is preferably formed by diffusion into a mesh-shaped recess etched through a silicon nitride, molybdenum or silicon nitride-on-oxide mask on the n- Si body 10, which ultimately forms the drain region and may have on its lower surface a diffused or epitaxial n<SP>+</SP> layer 13. The insulation 16 is then formed by localized oxidation through slightly enlarged apertures of the same mask (for the nitride-on-oxide mask the enlargement of the apertures may be effected only in the lower, oxide layer by wider-etching the upper, nitride layer). In the form shown an n<SP>+</SP> ring surrounds the insulation 16, but in two modifications this feature is lacking, being replaced in one case by an extension of the gate electrode 21 so as to overlap the outer periphery of the junction between the gate region 15 and the substrate 10 and in the other case by a peripheral capacitive field electrode connected to the source electrode 20.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4744573A JPS49134282A (en) | 1973-04-25 | 1973-04-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1412904A true GB1412904A (en) | 1975-11-05 |
Family
ID=12775330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3662573A Expired GB1412904A (en) | 1973-04-25 | 1973-08-01 | Juncttion gated field effect transistors |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS49134282A (en) |
| CA (1) | CA993567A (en) |
| DE (1) | DE2339444C2 (en) |
| FR (1) | FR2227645B1 (en) |
| GB (1) | GB1412904A (en) |
| IT (1) | IT993383B (en) |
| NL (1) | NL7312535A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2503800C2 (en) * | 1975-01-30 | 1984-02-16 | Sony Corp., Tokyo | Junction field effect transistor |
| JPS51129184A (en) * | 1975-05-02 | 1976-11-10 | Nec Corp | Vertical type field efect transistor |
| JPS5342683A (en) * | 1976-09-30 | 1978-04-18 | Mitsubishi Electric Corp | Vertical field effect transistor |
| JPS5846874B2 (en) * | 1977-04-27 | 1983-10-19 | 三菱電機株式会社 | Junction field effect transistor |
| JPS5680172A (en) * | 1979-12-04 | 1981-07-01 | Seiko Epson Corp | Semiconductor device |
| FR2480505A1 (en) * | 1980-04-14 | 1981-10-16 | Thomson Csf | VERTICALLY OPERATED POWER JUNCTION FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME |
| FR2480502A1 (en) * | 1980-04-14 | 1981-10-16 | Thomson Csf | DEEP GRID SEMICONDUCTOR DEVICE, ITS APPLICATION TO A BLOCKABLE DIODE, AND MANUFACTURING METHOD |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1539877A1 (en) * | 1965-11-19 | 1969-12-11 | Itt Ind Gmbh Deutsche | Switchable semiconductor component |
| FR2147883B1 (en) * | 1971-08-05 | 1977-01-28 | Teszner Stanislas |
-
1973
- 1973-04-25 JP JP4744573A patent/JPS49134282A/ja active Pending
- 1973-08-01 GB GB3662573A patent/GB1412904A/en not_active Expired
- 1973-08-03 DE DE19732339444 patent/DE2339444C2/en not_active Expired
- 1973-08-27 FR FR7330927A patent/FR2227645B1/fr not_active Expired
- 1973-09-11 NL NL7312535A patent/NL7312535A/xx not_active Application Discontinuation
- 1973-09-24 IT IT2926973A patent/IT993383B/en active
- 1973-12-13 CA CA188,102A patent/CA993567A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2339444C2 (en) | 1985-05-15 |
| CA993567A (en) | 1976-07-20 |
| FR2227645B1 (en) | 1977-08-05 |
| NL7312535A (en) | 1974-10-29 |
| IT993383B (en) | 1975-09-30 |
| FR2227645A1 (en) | 1974-11-22 |
| DE2339444A1 (en) | 1974-10-31 |
| JPS49134282A (en) | 1974-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19930731 |