CA993567A - Junction gated field effect transistor - Google Patents

Junction gated field effect transistor

Info

Publication number
CA993567A
CA993567A CA188,102A CA188102A CA993567A CA 993567 A CA993567 A CA 993567A CA 188102 A CA188102 A CA 188102A CA 993567 A CA993567 A CA 993567A
Authority
CA
Canada
Prior art keywords
field effect
effect transistor
gated field
junction gated
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA188,102A
Other languages
English (en)
Inventor
Akiyasu Ishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA993567A publication Critical patent/CA993567A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
CA188,102A 1973-04-25 1973-12-13 Junction gated field effect transistor Expired CA993567A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4744573A JPS49134282A (ja) 1973-04-25 1973-04-25

Publications (1)

Publication Number Publication Date
CA993567A true CA993567A (en) 1976-07-20

Family

ID=12775330

Family Applications (1)

Application Number Title Priority Date Filing Date
CA188,102A Expired CA993567A (en) 1973-04-25 1973-12-13 Junction gated field effect transistor

Country Status (7)

Country Link
JP (1) JPS49134282A (ja)
CA (1) CA993567A (ja)
DE (1) DE2339444C2 (ja)
FR (1) FR2227645B1 (ja)
GB (1) GB1412904A (ja)
IT (1) IT993383B (ja)
NL (1) NL7312535A (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2503800C2 (de) * 1975-01-30 1984-02-16 Sony Corp., Tokyo Sperrschicht-Feldeffekttransistor
JPS51129184A (en) * 1975-05-02 1976-11-10 Nec Corp Vertical type field efect transistor
JPS5342683A (en) * 1976-09-30 1978-04-18 Mitsubishi Electric Corp Vertical field effect transistor
JPS5846874B2 (ja) * 1977-04-27 1983-10-19 三菱電機株式会社 接合型電界効果トランジスタ
JPS5680172A (en) * 1979-12-04 1981-07-01 Seiko Epson Corp Semiconductor device
FR2480502A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication
FR2480505A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539877A1 (de) * 1965-11-19 1969-12-11 Itt Ind Gmbh Deutsche Schaltbares Halbleiterbauelement
FR2147883B1 (ja) * 1971-08-05 1977-01-28 Teszner Stanislas

Also Published As

Publication number Publication date
FR2227645A1 (ja) 1974-11-22
JPS49134282A (ja) 1974-12-24
GB1412904A (en) 1975-11-05
FR2227645B1 (ja) 1977-08-05
DE2339444C2 (de) 1985-05-15
IT993383B (it) 1975-09-30
DE2339444A1 (de) 1974-10-31
NL7312535A (ja) 1974-10-29

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