CA1016665A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
CA1016665A
CA1016665A CA206,672A CA206672A CA1016665A CA 1016665 A CA1016665 A CA 1016665A CA 206672 A CA206672 A CA 206672A CA 1016665 A CA1016665 A CA 1016665A
Authority
CA
Canada
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA206,672A
Inventor
Takaaki Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA1016665A publication Critical patent/CA1016665A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/24Frequency-independent attenuators
    • H03H11/245Frequency-independent attenuators using field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Networks Using Active Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
CA206,672A 1973-08-11 1974-08-09 Field effect transistor Expired CA1016665A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9024073A JPS563675B2 (en) 1973-08-11 1973-08-11

Publications (1)

Publication Number Publication Date
CA1016665A true CA1016665A (en) 1977-08-30

Family

ID=13992957

Family Applications (1)

Application Number Title Priority Date Filing Date
CA206,672A Expired CA1016665A (en) 1973-08-11 1974-08-09 Field effect transistor

Country Status (7)

Country Link
JP (1) JPS563675B2 (en)
CA (1) CA1016665A (en)
DE (1) DE2438693A1 (en)
FR (1) FR2240531B1 (en)
GB (1) GB1481724A (en)
IT (1) IT1019875B (en)
NL (1) NL7410799A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230183A (en) * 1975-09-02 1977-03-07 Matsushita Electric Ind Co Ltd Mos semiconductor device and process for producing it
GB1546672A (en) * 1975-07-03 1979-05-31 Sony Corp Signal compression and expansion circuits
NL7606483A (en) * 1976-06-16 1977-12-20 Philips Nv DEVICE FOR MIXING SIGNALS.
JPS5396768A (en) * 1977-02-04 1978-08-24 Nippon Telegr & Teleph Corp <Ntt> High resistance gate mis semiconductor

Also Published As

Publication number Publication date
DE2438693A1 (en) 1975-02-20
NL7410799A (en) 1975-02-13
FR2240531B1 (en) 1979-08-03
FR2240531A1 (en) 1975-03-07
IT1019875B (en) 1977-11-30
JPS5039878A (en) 1975-04-12
JPS563675B2 (en) 1981-01-26
GB1481724A (en) 1977-08-03

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