CA1016665A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- CA1016665A CA1016665A CA206,672A CA206672A CA1016665A CA 1016665 A CA1016665 A CA 1016665A CA 206672 A CA206672 A CA 206672A CA 1016665 A CA1016665 A CA 1016665A
- Authority
- CA
- Canada
- Prior art keywords
- field effect
- effect transistor
- transistor
- field
- effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Networks Using Active Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9024073A JPS563675B2 (en) | 1973-08-11 | 1973-08-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1016665A true CA1016665A (en) | 1977-08-30 |
Family
ID=13992957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA206,672A Expired CA1016665A (en) | 1973-08-11 | 1974-08-09 | Field effect transistor |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS563675B2 (en) |
CA (1) | CA1016665A (en) |
DE (1) | DE2438693A1 (en) |
FR (1) | FR2240531B1 (en) |
GB (1) | GB1481724A (en) |
IT (1) | IT1019875B (en) |
NL (1) | NL7410799A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5230183A (en) * | 1975-09-02 | 1977-03-07 | Matsushita Electric Ind Co Ltd | Mos semiconductor device and process for producing it |
GB1546672A (en) * | 1975-07-03 | 1979-05-31 | Sony Corp | Signal compression and expansion circuits |
NL7606483A (en) * | 1976-06-16 | 1977-12-20 | Philips Nv | DEVICE FOR MIXING SIGNALS. |
JPS5396768A (en) * | 1977-02-04 | 1978-08-24 | Nippon Telegr & Teleph Corp <Ntt> | High resistance gate mis semiconductor |
-
1973
- 1973-08-11 JP JP9024073A patent/JPS563675B2/ja not_active Expired
-
1974
- 1974-08-08 GB GB35035/74A patent/GB1481724A/en not_active Expired
- 1974-08-09 IT IT26229/74A patent/IT1019875B/en active
- 1974-08-09 CA CA206,672A patent/CA1016665A/en not_active Expired
- 1974-08-12 FR FR7427930A patent/FR2240531B1/fr not_active Expired
- 1974-08-12 DE DE2438693A patent/DE2438693A1/en not_active Withdrawn
- 1974-08-12 NL NL7410799A patent/NL7410799A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE2438693A1 (en) | 1975-02-20 |
NL7410799A (en) | 1975-02-13 |
FR2240531B1 (en) | 1979-08-03 |
FR2240531A1 (en) | 1975-03-07 |
IT1019875B (en) | 1977-11-30 |
JPS5039878A (en) | 1975-04-12 |
JPS563675B2 (en) | 1981-01-26 |
GB1481724A (en) | 1977-08-03 |
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