JPS563675B2 - - Google Patents

Info

Publication number
JPS563675B2
JPS563675B2 JP9024073A JP9024073A JPS563675B2 JP S563675 B2 JPS563675 B2 JP S563675B2 JP 9024073 A JP9024073 A JP 9024073A JP 9024073 A JP9024073 A JP 9024073A JP S563675 B2 JPS563675 B2 JP S563675B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9024073A
Other languages
Japanese (ja)
Other versions
JPS5039878A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9024073A priority Critical patent/JPS563675B2/ja
Priority to GB35035/74A priority patent/GB1481724A/en
Priority to IT26229/74A priority patent/IT1019875B/en
Priority to CA206,672A priority patent/CA1016665A/en
Priority to DE2438693A priority patent/DE2438693A1/en
Priority to NL7410799A priority patent/NL7410799A/en
Priority to FR7427930A priority patent/FR2240531B1/fr
Publication of JPS5039878A publication Critical patent/JPS5039878A/ja
Priority to US05/845,712 priority patent/US4141023A/en
Publication of JPS563675B2 publication Critical patent/JPS563675B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
JP9024073A 1973-08-11 1973-08-11 Expired JPS563675B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP9024073A JPS563675B2 (en) 1973-08-11 1973-08-11
GB35035/74A GB1481724A (en) 1973-08-11 1974-08-08 Field effect transistors
IT26229/74A IT1019875B (en) 1973-08-11 1974-08-09 FIELD EFFECT TRANSISTOR WITH A RESISTIVE DISCHARGE AND A CIRCUIT FOR THE SAME
CA206,672A CA1016665A (en) 1973-08-11 1974-08-09 Field effect transistor
DE2438693A DE2438693A1 (en) 1973-08-11 1974-08-12 FIELD EFFECT TRANSISTOR
NL7410799A NL7410799A (en) 1973-08-11 1974-08-12 FIELD EFFECT TRANSISTOR WITH A RESISTIVE DRAIN.
FR7427930A FR2240531B1 (en) 1973-08-11 1974-08-12
US05/845,712 US4141023A (en) 1973-08-11 1977-10-26 Field effect transistor having a linear attenuation characteristic and an improved distortion factor with multiple gate drain contacts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9024073A JPS563675B2 (en) 1973-08-11 1973-08-11

Publications (2)

Publication Number Publication Date
JPS5039878A JPS5039878A (en) 1975-04-12
JPS563675B2 true JPS563675B2 (en) 1981-01-26

Family

ID=13992957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9024073A Expired JPS563675B2 (en) 1973-08-11 1973-08-11

Country Status (7)

Country Link
JP (1) JPS563675B2 (en)
CA (1) CA1016665A (en)
DE (1) DE2438693A1 (en)
FR (1) FR2240531B1 (en)
GB (1) GB1481724A (en)
IT (1) IT1019875B (en)
NL (1) NL7410799A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230183A (en) * 1975-09-02 1977-03-07 Matsushita Electric Ind Co Ltd Mos semiconductor device and process for producing it
GB1546672A (en) * 1975-07-03 1979-05-31 Sony Corp Signal compression and expansion circuits
NL7606483A (en) * 1976-06-16 1977-12-20 Philips Nv DEVICE FOR MIXING SIGNALS.
JPS5396768A (en) * 1977-02-04 1978-08-24 Nippon Telegr & Teleph Corp <Ntt> High resistance gate mis semiconductor

Also Published As

Publication number Publication date
CA1016665A (en) 1977-08-30
JPS5039878A (en) 1975-04-12
IT1019875B (en) 1977-11-30
NL7410799A (en) 1975-02-13
GB1481724A (en) 1977-08-03
FR2240531A1 (en) 1975-03-07
FR2240531B1 (en) 1979-08-03
DE2438693A1 (en) 1975-02-20

Similar Documents

Publication Publication Date Title
AU476761B2 (en)
AU465372B2 (en)
AU474593B2 (en)
AU474511B2 (en)
AU474838B2 (en)
AU465453B2 (en)
AU465434B2 (en)
AU471343B2 (en)
AU450229B2 (en)
AU476714B2 (en)
AU476696B2 (en)
AU466283B2 (en)
AU472848B2 (en)
FR2240531B1 (en)
AU477823B2 (en)
AU477824B2 (en)
AU461342B2 (en)
AU471461B2 (en)
AU476873B1 (en)
AU447540B2 (en)
AR193950A1 (en)
AU479521A (en)
AU479496A (en)
AU479539A (en)
AU479562A (en)