GB1481724A - Field effect transistors - Google Patents

Field effect transistors

Info

Publication number
GB1481724A
GB1481724A GB35035/74A GB3503574A GB1481724A GB 1481724 A GB1481724 A GB 1481724A GB 35035/74 A GB35035/74 A GB 35035/74A GB 3503574 A GB3503574 A GB 3503574A GB 1481724 A GB1481724 A GB 1481724A
Authority
GB
United Kingdom
Prior art keywords
drain
source
electrodes
gate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35035/74A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1481724A publication Critical patent/GB1481724A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Networks Using Active Elements (AREA)

Abstract

1481724 Field-effect transistors SONY CORP 8 Aug 1974 [11 Aug 1973] 35035/74 Heading H1K In an IGFET for use as an attenuator comprising elongate parallel source and drain regions formed in the surface of a substrate of opposite conductivity type, the drain region has a greater resistance between its ends than the source and is provided with input and output electrodes at its respective ends, and the gate consists of resistive material, e.g. polycrystalline silicon. In one embodiment the gate also has electrodes at its ends between which a voltage gradient can be maintained to provide a substantially linear attentuation characteristic. In the embodiment shown in plan in Fig. 9 the gate has less resistive regions over the facing edges of the source and drain regions and carries an elongate electrode Q s on the source side, and further electrodes G 1D(1-4) spaced along the drain side and each associated with and connected via a capacitance to an adjacent electrode on the drain region. In operation the control voltage is applied to electrode G s and voltages applied to the remaining gates which differ from this by the voltage on the associated drain electrodes.
GB35035/74A 1973-08-11 1974-08-08 Field effect transistors Expired GB1481724A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9024073A JPS563675B2 (en) 1973-08-11 1973-08-11

Publications (1)

Publication Number Publication Date
GB1481724A true GB1481724A (en) 1977-08-03

Family

ID=13992957

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35035/74A Expired GB1481724A (en) 1973-08-11 1974-08-08 Field effect transistors

Country Status (7)

Country Link
JP (1) JPS563675B2 (en)
CA (1) CA1016665A (en)
DE (1) DE2438693A1 (en)
FR (1) FR2240531B1 (en)
GB (1) GB1481724A (en)
IT (1) IT1019875B (en)
NL (1) NL7410799A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230183A (en) * 1975-09-02 1977-03-07 Matsushita Electric Ind Co Ltd Mos semiconductor device and process for producing it
GB1546672A (en) * 1975-07-03 1979-05-31 Sony Corp Signal compression and expansion circuits
NL7606483A (en) * 1976-06-16 1977-12-20 Philips Nv DEVICE FOR MIXING SIGNALS.
JPS5396768A (en) * 1977-02-04 1978-08-24 Nippon Telegr & Teleph Corp <Ntt> High resistance gate mis semiconductor

Also Published As

Publication number Publication date
FR2240531B1 (en) 1979-08-03
JPS563675B2 (en) 1981-01-26
NL7410799A (en) 1975-02-13
IT1019875B (en) 1977-11-30
JPS5039878A (en) 1975-04-12
CA1016665A (en) 1977-08-30
DE2438693A1 (en) 1975-02-20
FR2240531A1 (en) 1975-03-07

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19940807