GB1431199A - Variable impedance circuits - Google Patents
Variable impedance circuitsInfo
- Publication number
- GB1431199A GB1431199A GB2208573A GB2208573A GB1431199A GB 1431199 A GB1431199 A GB 1431199A GB 2208573 A GB2208573 A GB 2208573A GB 2208573 A GB2208573 A GB 2208573A GB 1431199 A GB1431199 A GB 1431199A
- Authority
- GB
- United Kingdom
- Prior art keywords
- drain regions
- source
- layer
- gate electrodes
- insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009413 insulation Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Networks Using Active Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
1431199 Field effect transistors SONY CORP 9 May 1973 [13 May 1972 20 June 1972] 22085/73 Heading H1K [Also in Division H4] An IGFET comprises spaced source and drain regions formed in a surface of a substrate body or region of the opposite conductivity type, a layer of resistive material overlying the gate insulation and extending in insulation fashion over at least part of the source and drain regions, and two gate electrodes on said layer, the facing edges of the two gate electrodes being aligned with the facing edges of the source and drain regions. As described the substrate region is of 50 ohm. cm. resistivity and overlies a body of opposite conductivity type, the source and drain regions have a doping of 10<SP>19</SP> atoms/cc., and the channel between them is 20Á long and 300 Á wide. The resistive layer is 1 Á thick, consists of polycrystalline silicon with a surface resistivity between 10 K# and 30 G#/square, and overlies a 1200 Š layer of silica constituting the gate insulation. It is preferably more heavily doped beneath the two gate electrodes. Circuits utilizing the device are described.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4757872A JPS5323989B2 (en) | 1972-05-13 | 1972-05-13 | |
JP7298072U JPS4932537U (en) | 1972-06-20 | 1972-06-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1431199A true GB1431199A (en) | 1976-04-07 |
Family
ID=26387754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2208573A Expired GB1431199A (en) | 1972-05-13 | 1973-05-09 | Variable impedance circuits |
Country Status (7)
Country | Link |
---|---|
AT (1) | AT354518B (en) |
CA (1) | CA999061A (en) |
DE (1) | DE2323471C2 (en) |
FR (1) | FR2184815B1 (en) |
GB (1) | GB1431199A (en) |
IT (1) | IT989208B (en) |
NL (1) | NL7306701A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2507028A1 (en) * | 1981-05-29 | 1982-12-03 | Hitachi Ltd | ELECTRONIC CIRCUIT DEVICE, ESPECIALLY FOR USE IN AN ELECTRICALLY PROGRAMMABLE DEAD MEMORY |
GB2256088B (en) * | 1991-05-23 | 1995-10-18 | Samsung Electronics Co Ltd | A gate-to-drain overlapped mos transistor fabrication process and structure thereof |
US20180102404A1 (en) * | 2016-10-12 | 2018-04-12 | Mediatek Inc. | Impedance circuit with poly-resistor |
US20180233499A1 (en) * | 2016-10-12 | 2018-08-16 | Mediatek Inc. | Impedance circuit with poly-resistor |
EP3451398A1 (en) * | 2017-09-01 | 2019-03-06 | MediaTek Inc. | Impedance circuit with poly-resistor |
US10461702B2 (en) | 2017-04-19 | 2019-10-29 | Mediatek Inc. | Amplifier circuit having poly resistor with biased depletion region |
-
1973
- 1973-05-09 DE DE19732323471 patent/DE2323471C2/en not_active Expired
- 1973-05-09 GB GB2208573A patent/GB1431199A/en not_active Expired
- 1973-05-11 IT IT2398473A patent/IT989208B/en active
- 1973-05-11 AT AT417673A patent/AT354518B/en not_active IP Right Cessation
- 1973-05-11 CA CA170,994A patent/CA999061A/en not_active Expired
- 1973-05-14 NL NL7306701A patent/NL7306701A/xx not_active Application Discontinuation
- 1973-05-14 FR FR7317384A patent/FR2184815B1/fr not_active Expired
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2507028A1 (en) * | 1981-05-29 | 1982-12-03 | Hitachi Ltd | ELECTRONIC CIRCUIT DEVICE, ESPECIALLY FOR USE IN AN ELECTRICALLY PROGRAMMABLE DEAD MEMORY |
GB2256088B (en) * | 1991-05-23 | 1995-10-18 | Samsung Electronics Co Ltd | A gate-to-drain overlapped mos transistor fabrication process and structure thereof |
US20180102404A1 (en) * | 2016-10-12 | 2018-04-12 | Mediatek Inc. | Impedance circuit with poly-resistor |
CN107947757A (en) * | 2016-10-12 | 2018-04-20 | 联发科技股份有限公司 | Impedance circuit |
EP3309850A3 (en) * | 2016-10-12 | 2018-06-06 | MediaTek Inc. | Impedance circuit with poly-resistor |
US20180233499A1 (en) * | 2016-10-12 | 2018-08-16 | Mediatek Inc. | Impedance circuit with poly-resistor |
US10510823B2 (en) | 2016-10-12 | 2019-12-17 | Mediatek Inc. | Impedance circuit with poly-resistor |
US10535651B2 (en) | 2016-10-12 | 2020-01-14 | Mediatek Inc. | Impedance circuit with poly-resistor |
CN107947757B (en) * | 2016-10-12 | 2021-12-07 | 联发科技股份有限公司 | Impedance circuit |
US10461702B2 (en) | 2017-04-19 | 2019-10-29 | Mediatek Inc. | Amplifier circuit having poly resistor with biased depletion region |
EP3451398A1 (en) * | 2017-09-01 | 2019-03-06 | MediaTek Inc. | Impedance circuit with poly-resistor |
Also Published As
Publication number | Publication date |
---|---|
AT354518B (en) | 1979-01-10 |
IT989208B (en) | 1975-05-20 |
NL7306701A (en) | 1973-11-15 |
FR2184815A1 (en) | 1973-12-28 |
FR2184815B1 (en) | 1977-09-02 |
ATA417673A (en) | 1979-06-15 |
DE2323471A1 (en) | 1973-11-29 |
CA999061A (en) | 1976-10-26 |
DE2323471C2 (en) | 1985-09-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1447604A (en) | Ferroelectric memory device | |
JPS6453577A (en) | Nonvolatile semiconductor device and manufacture thereof | |
GB1473394A (en) | Negative resistance semiconductor device | |
TW344899B (en) | Semiconductor device and process for producing the same | |
GB1435589A (en) | Field effect transistors | |
EP0268426A3 (en) | High speed junction field effect transistor for use in bipolar integrated circuits | |
GB1450293A (en) | Semiconductor integrated circuits | |
GB1431199A (en) | Variable impedance circuits | |
GB1447675A (en) | Semiconductor devices | |
EP0848425A3 (en) | Semiconductor device including protection means | |
GB1476790A (en) | Semiconductor device including an insulated gate field effect transistor and method for its manufacture | |
US4215356A (en) | Junction field effect transistor | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
GB1471282A (en) | Field effect semiconductor devices | |
KR920008964A (en) | Transmission charge amplifier | |
GB1217880A (en) | Lateral transistor with auxiliary control electrode | |
GB1248051A (en) | Method of making insulated gate field effect transistors | |
GB1470683A (en) | Variable impedance circuits comprising a field effect transistor | |
JPS56126977A (en) | Junction type field effect transistor | |
JPS6468968A (en) | Thin film transistor | |
GB1045429A (en) | Transistors | |
JPS6450460A (en) | Photodetector | |
JPS5654071A (en) | Insulated gate field-effect transistor | |
JPS6459864A (en) | Mos transistor | |
JPS5636165A (en) | Insulated gate type field-effect transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19930508 |