GB1217880A - Lateral transistor with auxiliary control electrode - Google Patents

Lateral transistor with auxiliary control electrode

Info

Publication number
GB1217880A
GB1217880A GB4711768A GB4711768A GB1217880A GB 1217880 A GB1217880 A GB 1217880A GB 4711768 A GB4711768 A GB 4711768A GB 4711768 A GB4711768 A GB 4711768A GB 1217880 A GB1217880 A GB 1217880A
Authority
GB
United Kingdom
Prior art keywords
emitter
collector
base region
electrode
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4711768A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1217880A publication Critical patent/GB1217880A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,217,880. Lateral transistors. RCA CORPORATION. 4 Oct., 1968 [13 Oct., 1967], No. 47117/68. Heading H1K. In a lateral transistor with a substantially annular base region an insulated gate control electrode is disposed over at least part of the base region. In one embodiment in which the emitter and collector are shallow diffused regions they are connected by a thin surface web of the same conductivity type at zero bias but application of an appropriate bias to the control electrode converts this into a base region by surface inversion. In the principal embodiment, Fig. 1, the square emitter 6 and asymmetrical square frame collector 7 are formed by diffusion in a portion of epitaxial N layer 3 isolated by a P + diffused wall extending to the P substrate. Deposited aluminium electrodes 9, 10, 16 extending over a surface oxide layer contact the collector, emitter, and control electrodes while base electrode 12 contacts a U-shaped N+ layer 11. Cross-overs may be avoided by making electrode 16 U-shaped, but it is more effective if it covers the entire base region. The emitter and collector regions may be interdigitated and their roles reversed. By application of suitably poled control signals, the device may be used as a switch or a variable gain amplifier.
GB4711768A 1967-10-13 1968-10-04 Lateral transistor with auxiliary control electrode Expired GB1217880A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67513867A 1967-10-13 1967-10-13

Publications (1)

Publication Number Publication Date
GB1217880A true GB1217880A (en) 1970-12-31

Family

ID=24709213

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4711768A Expired GB1217880A (en) 1967-10-13 1968-10-04 Lateral transistor with auxiliary control electrode

Country Status (4)

Country Link
DE (1) DE1803032A1 (en)
FR (1) FR1601603A (en)
GB (1) GB1217880A (en)
NL (1) NL6814580A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2852402A1 (en) * 1977-12-05 1979-06-07 Hitachi Ltd LATERAL SEMI-CONDUCTOR COMPONENT
CN101814433B (en) * 2009-02-20 2013-02-27 联发科技股份有限公司 Lateral bipolar junction transistor and method for manufacturing the same
US8674454B2 (en) 2009-02-20 2014-03-18 Mediatek Inc. Lateral bipolar junction transistor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4819113B1 (en) * 1969-08-27 1973-06-11
JPS5268382A (en) * 1975-12-05 1977-06-07 Hitachi Ltd Semiconductor circuit unit
DE3042035C2 (en) * 1980-11-07 1983-11-10 Schwan-Stabilo Schwanhäußer GmbH & Co, 8500 Nürnberg Writing, drawing, painting or the like. Device with a replaceable cartridge
US5717241A (en) * 1993-12-09 1998-02-10 Northern Telecom Limited Gate controlled lateral bipolar junction transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2852402A1 (en) * 1977-12-05 1979-06-07 Hitachi Ltd LATERAL SEMI-CONDUCTOR COMPONENT
CN101814433B (en) * 2009-02-20 2013-02-27 联发科技股份有限公司 Lateral bipolar junction transistor and method for manufacturing the same
US8674454B2 (en) 2009-02-20 2014-03-18 Mediatek Inc. Lateral bipolar junction transistor
US8836043B2 (en) 2009-02-20 2014-09-16 Mediatek Inc. Lateral bipolar junction transistor
US9324705B2 (en) 2009-02-20 2016-04-26 Mediatek Inc. Lateral bipolar junction transistor

Also Published As

Publication number Publication date
FR1601603A (en) 1970-09-07
NL6814580A (en) 1969-04-15
DE1803032A1 (en) 1969-05-22

Similar Documents

Publication Publication Date Title
GB1435589A (en) Field effect transistors
GB1447849A (en) Stabilized semiconductor devices and method of making same
GB954947A (en) Surface-potential controlled semiconductor device
GB1099381A (en) Solid state field-effect devices
GB1155578A (en) Field Effect Transistor
GB1525415A (en) Mos transistor
GB1217880A (en) Lateral transistor with auxiliary control electrode
GB1060208A (en) Avalanche transistor
US4466008A (en) Field effect transistor
US3663869A (en) Bipolar-unipolar transistor structure
GB1129531A (en) Improvements in and relating to semiconductor devices
GB983266A (en) Semiconductor switching devices
SE326466B (en)
GB1228471A (en)
GB1477514A (en) Semiconductor devices
ES482691A1 (en) Semiconductor devices
GB1245765A (en) Surface diffused semiconductor devices
GB1529216A (en) Lateral bipolar transistor
GB1127629A (en) Improved semi-conductor element
GB1458579A (en) Semi-conductor gate controlled switch devices
GB1327298A (en) Insulated gate-field-effect transistor with variable gain
JPS626352B2 (en)
GB1021147A (en) Divided base four-layer semiconductor device
GB1335037A (en) Field effect transistor
JPS56126977A (en) Junction type field effect transistor