IT1019875B - FIELD EFFECT TRANSISTOR WITH A RESISTIVE DISCHARGE AND A CIRCUIT FOR THE SAME - Google Patents

FIELD EFFECT TRANSISTOR WITH A RESISTIVE DISCHARGE AND A CIRCUIT FOR THE SAME

Info

Publication number
IT1019875B
IT1019875B IT26229/74A IT2622974A IT1019875B IT 1019875 B IT1019875 B IT 1019875B IT 26229/74 A IT26229/74 A IT 26229/74A IT 2622974 A IT2622974 A IT 2622974A IT 1019875 B IT1019875 B IT 1019875B
Authority
IT
Italy
Prior art keywords
circuit
same
field effect
effect transistor
resistive discharge
Prior art date
Application number
IT26229/74A
Other languages
Italian (it)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT1019875B publication Critical patent/IT1019875B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
IT26229/74A 1973-08-11 1974-08-09 FIELD EFFECT TRANSISTOR WITH A RESISTIVE DISCHARGE AND A CIRCUIT FOR THE SAME IT1019875B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9024073A JPS563675B2 (en) 1973-08-11 1973-08-11

Publications (1)

Publication Number Publication Date
IT1019875B true IT1019875B (en) 1977-11-30

Family

ID=13992957

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26229/74A IT1019875B (en) 1973-08-11 1974-08-09 FIELD EFFECT TRANSISTOR WITH A RESISTIVE DISCHARGE AND A CIRCUIT FOR THE SAME

Country Status (7)

Country Link
JP (1) JPS563675B2 (en)
CA (1) CA1016665A (en)
DE (1) DE2438693A1 (en)
FR (1) FR2240531B1 (en)
GB (1) GB1481724A (en)
IT (1) IT1019875B (en)
NL (1) NL7410799A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230183A (en) * 1975-09-02 1977-03-07 Matsushita Electric Ind Co Ltd Mos semiconductor device and process for producing it
GB1546672A (en) * 1975-07-03 1979-05-31 Sony Corp Signal compression and expansion circuits
NL7606483A (en) * 1976-06-16 1977-12-20 Philips Nv DEVICE FOR MIXING SIGNALS.
JPS5396768A (en) * 1977-02-04 1978-08-24 Nippon Telegr & Teleph Corp <Ntt> High resistance gate mis semiconductor

Also Published As

Publication number Publication date
FR2240531B1 (en) 1979-08-03
DE2438693A1 (en) 1975-02-20
GB1481724A (en) 1977-08-03
CA1016665A (en) 1977-08-30
JPS5039878A (en) 1975-04-12
FR2240531A1 (en) 1975-03-07
NL7410799A (en) 1975-02-13
JPS563675B2 (en) 1981-01-26

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