IT1007011B - INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS - Google Patents

INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS

Info

Publication number
IT1007011B
IT1007011B IT1964874A IT1964874A IT1007011B IT 1007011 B IT1007011 B IT 1007011B IT 1964874 A IT1964874 A IT 1964874A IT 1964874 A IT1964874 A IT 1964874A IT 1007011 B IT1007011 B IT 1007011B
Authority
IT
Italy
Prior art keywords
integrated circuit
field effect
effect transistors
transistors
field
Prior art date
Application number
IT1964874A
Other languages
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1007011B publication Critical patent/IT1007011B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
IT1964874A 1973-01-26 1974-01-21 INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS IT1007011B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732303916 DE2303916A1 (en) 1973-01-26 1973-01-26 INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS

Publications (1)

Publication Number Publication Date
IT1007011B true IT1007011B (en) 1976-10-30

Family

ID=5870074

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1964874A IT1007011B (en) 1973-01-26 1974-01-21 INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS

Country Status (12)

Country Link
JP (1) JPS49110281A (en)
AT (1) AT339375B (en)
BE (1) BE810156A (en)
CA (1) CA1013482A (en)
CH (1) CH564850A5 (en)
DE (1) DE2303916A1 (en)
FR (1) FR2215704B1 (en)
GB (1) GB1413900A (en)
IT (1) IT1007011B (en)
LU (1) LU69236A1 (en)
NL (1) NL7400934A (en)
SE (1) SE385752B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080783A (en) * 1973-11-14 1975-07-01
JPS5810118B2 (en) * 1974-08-28 1983-02-24 株式会社東芝 Kaiheibuta no Anzensouchi
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit

Also Published As

Publication number Publication date
AT339375B (en) 1977-10-10
CH564850A5 (en) 1975-07-31
SE385752B (en) 1976-07-19
LU69236A1 (en) 1974-04-10
DE2303916A1 (en) 1974-08-01
CA1013482A (en) 1977-07-05
FR2215704A1 (en) 1974-08-23
ATA1051373A (en) 1977-02-15
GB1413900A (en) 1975-11-12
FR2215704B1 (en) 1977-08-26
NL7400934A (en) 1974-07-30
BE810156A (en) 1974-05-16
JPS49110281A (en) 1974-10-21

Similar Documents

Publication Publication Date Title
IT1007147B (en) INTEGRATED CIRCUIT
IT958927B (en) INTEGRATED CIRCUIT
IT1058321B (en) FIELD-EFFECTIVE COMPLEMENTARY TRANSISTOR
IT1021265B (en) INTEGRATED CIRCUIT
IT987474B (en) MEMORY CIRCUIT WITH TRANSI STOR WITH FIELD EFFECT
IT1012351B (en) SEMICONDUCTOR INTEGRATED CIRCUIT
AR198551A1 (en) FILM CIRCUIT SET
IT1044690B (en) DEVICE WITH TWO COMPLEMENTARY FIELD-EFFECT TRANSISTORS
IT962927B (en) FIELD EFFECT TRANSISTOR
BR7402269D0 (en) CIRCUIT
IT990432B (en) BISTABLE CIRCUIT USING TRANSISTOR WITH ISOLATED GRID FIELD EFFECT
IT962963B (en) CIRCUIT ARRANGEMENT AT PHASE AGGAN CIAM
IT990205B (en) TRANSISTOR CIRCUIT
IT994173B (en) LOGICAL CIRCUIT ARRANGEMENT USING TRANSISTOR I G ALSO KNOWN AS ISOLATED GRID FIELD EFFECT TRANSISTOR
IT1015566B (en) MEMORY CIRCUIT
SE7412165L (en) INTEGRATED CIRCUIT
IT1010163B (en) RI TRANSISTING HOOKING CIRCUIT WITHOUT DELAY
IT978033B (en) INTEGRATED CIRCUIT
BE817663A (en) INTEGRATED CIRCUITS
IT1009962B (en) TRANSISTOR LOGIC CIRCUIT MODIFIED TRANSISTOR
IT1022332B (en) DEVICE WITH FIELD EFFECT TRANSISTORS
IT1007011B (en) INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS
IT993383B (en) CONTROLLED JUNCTION FIELD EFFECT TRANSISTOR
IT1021167B (en) DARLINGTON SEMICONDUCTOR CIRCUIT
IT1014175B (en) INTER-URBAN TELEPHONE CIRCUIT