CA1013482A - Integrated circuit employing at least two field effect transistors - Google Patents
Integrated circuit employing at least two field effect transistorsInfo
- Publication number
- CA1013482A CA1013482A CA190,793A CA190793A CA1013482A CA 1013482 A CA1013482 A CA 1013482A CA 190793 A CA190793 A CA 190793A CA 1013482 A CA1013482 A CA 1013482A
- Authority
- CA
- Canada
- Prior art keywords
- integrated circuit
- field effect
- effect transistors
- circuit employing
- employing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732303916 DE2303916A1 (en) | 1973-01-26 | 1973-01-26 | INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1013482A true CA1013482A (en) | 1977-07-05 |
Family
ID=5870074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA190,793A Expired CA1013482A (en) | 1973-01-26 | 1974-01-23 | Integrated circuit employing at least two field effect transistors |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS49110281A (en) |
| AT (1) | AT339375B (en) |
| BE (1) | BE810156A (en) |
| CA (1) | CA1013482A (en) |
| CH (1) | CH564850A5 (en) |
| DE (1) | DE2303916A1 (en) |
| FR (1) | FR2215704B1 (en) |
| GB (1) | GB1413900A (en) |
| IT (1) | IT1007011B (en) |
| LU (1) | LU69236A1 (en) |
| NL (1) | NL7400934A (en) |
| SE (1) | SE385752B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5080783A (en) * | 1973-11-14 | 1975-07-01 | ||
| JPS5810118B2 (en) * | 1974-08-28 | 1983-02-24 | 株式会社東芝 | Kaiheibuta no Anzensouchi |
| US4016016A (en) * | 1975-05-22 | 1977-04-05 | Rca Corporation | Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices |
| JPS5610958A (en) * | 1979-07-10 | 1981-02-03 | Toshiba Corp | Semiconductor circuit |
-
1973
- 1973-01-26 DE DE19732303916 patent/DE2303916A1/en active Pending
- 1973-12-14 AT AT1051373A patent/AT339375B/en active
- 1973-12-21 GB GB5958973A patent/GB1413900A/en not_active Expired
-
1974
- 1974-01-09 CH CH22874A patent/CH564850A5/xx not_active IP Right Cessation
- 1974-01-11 SE SE7400358A patent/SE385752B/en unknown
- 1974-01-21 IT IT1964874A patent/IT1007011B/en active
- 1974-01-22 FR FR7402087A patent/FR2215704B1/fr not_active Expired
- 1974-01-23 NL NL7400934A patent/NL7400934A/xx unknown
- 1974-01-23 CA CA190,793A patent/CA1013482A/en not_active Expired
- 1974-01-24 LU LU69236D patent/LU69236A1/xx unknown
- 1974-01-25 BE BE140172A patent/BE810156A/en unknown
- 1974-01-25 JP JP1034474A patent/JPS49110281A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| LU69236A1 (en) | 1974-04-10 |
| NL7400934A (en) | 1974-07-30 |
| CH564850A5 (en) | 1975-07-31 |
| GB1413900A (en) | 1975-11-12 |
| DE2303916A1 (en) | 1974-08-01 |
| BE810156A (en) | 1974-05-16 |
| JPS49110281A (en) | 1974-10-21 |
| FR2215704A1 (en) | 1974-08-23 |
| FR2215704B1 (en) | 1977-08-26 |
| IT1007011B (en) | 1976-10-30 |
| AT339375B (en) | 1977-10-10 |
| ATA1051373A (en) | 1977-02-15 |
| SE385752B (en) | 1976-07-19 |
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