FR2215704B1 - - Google Patents

Info

Publication number
FR2215704B1
FR2215704B1 FR7402087A FR7402087A FR2215704B1 FR 2215704 B1 FR2215704 B1 FR 2215704B1 FR 7402087 A FR7402087 A FR 7402087A FR 7402087 A FR7402087 A FR 7402087A FR 2215704 B1 FR2215704 B1 FR 2215704B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7402087A
Other versions
FR2215704A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2215704A1 publication Critical patent/FR2215704A1/fr
Application granted granted Critical
Publication of FR2215704B1 publication Critical patent/FR2215704B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
FR7402087A 1973-01-26 1974-01-22 Expired FR2215704B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732303916 DE2303916A1 (de) 1973-01-26 1973-01-26 Integrierte schaltung mit feldeffekttransistoren

Publications (2)

Publication Number Publication Date
FR2215704A1 FR2215704A1 (fr) 1974-08-23
FR2215704B1 true FR2215704B1 (fr) 1977-08-26

Family

ID=5870074

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7402087A Expired FR2215704B1 (fr) 1973-01-26 1974-01-22

Country Status (12)

Country Link
JP (1) JPS49110281A (fr)
AT (1) AT339375B (fr)
BE (1) BE810156A (fr)
CA (1) CA1013482A (fr)
CH (1) CH564850A5 (fr)
DE (1) DE2303916A1 (fr)
FR (1) FR2215704B1 (fr)
GB (1) GB1413900A (fr)
IT (1) IT1007011B (fr)
LU (1) LU69236A1 (fr)
NL (1) NL7400934A (fr)
SE (1) SE385752B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080783A (fr) * 1973-11-14 1975-07-01
JPS5810118B2 (ja) * 1974-08-28 1983-02-24 株式会社東芝 カイヘイブタ ノ アンゼンソウチ
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit

Also Published As

Publication number Publication date
AT339375B (de) 1977-10-10
CH564850A5 (fr) 1975-07-31
SE385752B (sv) 1976-07-19
LU69236A1 (fr) 1974-04-10
DE2303916A1 (de) 1974-08-01
CA1013482A (en) 1977-07-05
FR2215704A1 (fr) 1974-08-23
ATA1051373A (de) 1977-02-15
GB1413900A (en) 1975-11-12
NL7400934A (fr) 1974-07-30
BE810156A (fr) 1974-05-16
JPS49110281A (fr) 1974-10-21
IT1007011B (it) 1976-10-30

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Legal Events

Date Code Title Description
ST Notification of lapse