CH564850A5 - - Google Patents

Info

Publication number
CH564850A5
CH564850A5 CH22874A CH22874A CH564850A5 CH 564850 A5 CH564850 A5 CH 564850A5 CH 22874 A CH22874 A CH 22874A CH 22874 A CH22874 A CH 22874A CH 564850 A5 CH564850 A5 CH 564850A5
Authority
CH
Switzerland
Application number
CH22874A
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH564850A5 publication Critical patent/CH564850A5/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
CH22874A 1973-01-26 1974-01-09 CH564850A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732303916 DE2303916A1 (en) 1973-01-26 1973-01-26 INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS

Publications (1)

Publication Number Publication Date
CH564850A5 true CH564850A5 (en) 1975-07-31

Family

ID=5870074

Family Applications (1)

Application Number Title Priority Date Filing Date
CH22874A CH564850A5 (en) 1973-01-26 1974-01-09

Country Status (12)

Country Link
JP (1) JPS49110281A (en)
AT (1) AT339375B (en)
BE (1) BE810156A (en)
CA (1) CA1013482A (en)
CH (1) CH564850A5 (en)
DE (1) DE2303916A1 (en)
FR (1) FR2215704B1 (en)
GB (1) GB1413900A (en)
IT (1) IT1007011B (en)
LU (1) LU69236A1 (en)
NL (1) NL7400934A (en)
SE (1) SE385752B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080783A (en) * 1973-11-14 1975-07-01
JPS5810118B2 (en) * 1974-08-28 1983-02-24 株式会社東芝 Kaiheibuta no Anzensouchi
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit

Also Published As

Publication number Publication date
LU69236A1 (en) 1974-04-10
FR2215704B1 (en) 1977-08-26
NL7400934A (en) 1974-07-30
CA1013482A (en) 1977-07-05
BE810156A (en) 1974-05-16
ATA1051373A (en) 1977-02-15
AT339375B (en) 1977-10-10
SE385752B (en) 1976-07-19
JPS49110281A (en) 1974-10-21
FR2215704A1 (en) 1974-08-23
DE2303916A1 (en) 1974-08-01
IT1007011B (en) 1976-10-30
GB1413900A (en) 1975-11-12

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Legal Events

Date Code Title Description
PL Patent ceased