JPS5651088A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5651088A
JPS5651088A JP12495679A JP12495679A JPS5651088A JP S5651088 A JPS5651088 A JP S5651088A JP 12495679 A JP12495679 A JP 12495679A JP 12495679 A JP12495679 A JP 12495679A JP S5651088 A JPS5651088 A JP S5651088A
Authority
JP
Japan
Prior art keywords
gate
current
fetq1
source
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12495679A
Other languages
Japanese (ja)
Inventor
Isao Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12495679A priority Critical patent/JPS5651088A/en
Publication of JPS5651088A publication Critical patent/JPS5651088A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To reduce the current consumption and occupied area, by using a transfer gate MOSFET of different conduction type as driving MOSFET, for a given area at the same time. CONSTITUTION:Ion injection is being made so that the threshold voltage value specified is given to transfer gate P type MOSFETQ1, Q2 and driving N type MOSFETQ3, Q4. Thus, when a voltage between the gate and the source is zero, the current between the drain and the source is greater for FETQ1, Q2 than FETQ3, Q4, and the increment of the gate voltage required to change one digit of the current between the drain and the source at the gate voltage less than the threshold value is greater for FETQ1, Q2 than FETQ3, Q4. Further, FETQ1, Q2 are operated at the gate current region at threshold value or less for load at the same time. Accordingly, the current consumption is lowered for the memory unit in comparison with use of a high resistance and the occupied area is decreased.
JP12495679A 1979-09-28 1979-09-28 Semiconductor memory device Pending JPS5651088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12495679A JPS5651088A (en) 1979-09-28 1979-09-28 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12495679A JPS5651088A (en) 1979-09-28 1979-09-28 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5651088A true JPS5651088A (en) 1981-05-08

Family

ID=14898370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12495679A Pending JPS5651088A (en) 1979-09-28 1979-09-28 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5651088A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0113867A2 (en) * 1982-12-20 1984-07-25 General Electric Company Cross-coupled transistor memory cell for MOS random access memory of reduced power dissipation
US4653025A (en) * 1983-12-23 1987-03-24 Hitachi, Ltd. Random access memory with high density and low power
US6654273B2 (en) 2000-09-29 2003-11-25 Nec Electronics Corporation Shadow ram cell using a ferroelectric capacitor
US6674105B2 (en) 1998-10-16 2004-01-06 Nec Corporation Semiconductor memory device and method of forming the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368991A (en) * 1976-12-02 1978-06-19 Fujitsu Ltd 4-transistor static memory cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368991A (en) * 1976-12-02 1978-06-19 Fujitsu Ltd 4-transistor static memory cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0113867A2 (en) * 1982-12-20 1984-07-25 General Electric Company Cross-coupled transistor memory cell for MOS random access memory of reduced power dissipation
US4653025A (en) * 1983-12-23 1987-03-24 Hitachi, Ltd. Random access memory with high density and low power
US6674105B2 (en) 1998-10-16 2004-01-06 Nec Corporation Semiconductor memory device and method of forming the same
US6654273B2 (en) 2000-09-29 2003-11-25 Nec Electronics Corporation Shadow ram cell using a ferroelectric capacitor
US6731530B2 (en) 2000-09-29 2004-05-04 Nec Corporation Shadow RAM cell using a ferroelectric capacitor

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