JPS5658270A - Junction type field-effect transistor - Google Patents
Junction type field-effect transistorInfo
- Publication number
- JPS5658270A JPS5658270A JP13343479A JP13343479A JPS5658270A JP S5658270 A JPS5658270 A JP S5658270A JP 13343479 A JP13343479 A JP 13343479A JP 13343479 A JP13343479 A JP 13343479A JP S5658270 A JPS5658270 A JP S5658270A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- section
- type
- whole surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain minute structure and increase the operational speed of a J-FET by a mechanism wherein at least one among electrodes formed to the FET is made up by using a metallic silicide. CONSTITUTION:A p type layer 2 is grown on an n type Si substrate 1 in an epitaxial shape, the whole surface is coated with a thick SiO2 film 4, a section on a region where an element is formed is removed, the section is covered with a thin SiO2 film 5. An opening section 6 is bored to the film 5, an n<+> type gate region 7 is made up into the layer 2 in a diffusion shape, Mo and Si are simultaneously evaporated on the whole surface in vacuum, and a gate electrode 8 of MoSi2 extending on an end section of the film 5 and contacting with the region 7 is formed by means of CF4 plasma etching. The film 5 on the region where the element is formed is removed by means of etching using the electrode 8 as a mask, and a p<+> type source region 9 and a drain region 10 are made up into the layer 2 exposing at both sides of the region 7 in diffusion shapes. An SiO2 film 11 is formed on the whole surface by means of a CVD method, windows are opened, and Al electrodes 12, 13 are fitted to the regions 9, 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13343479A JPS5658270A (en) | 1979-10-16 | 1979-10-16 | Junction type field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13343479A JPS5658270A (en) | 1979-10-16 | 1979-10-16 | Junction type field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5658270A true JPS5658270A (en) | 1981-05-21 |
Family
ID=15104677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13343479A Pending JPS5658270A (en) | 1979-10-16 | 1979-10-16 | Junction type field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5658270A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213171A (en) * | 1983-05-19 | 1984-12-03 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US5510632A (en) * | 1993-04-19 | 1996-04-23 | General Electric Company | Silicon carbide junction field effect transistor device for high temperature applications |
-
1979
- 1979-10-16 JP JP13343479A patent/JPS5658270A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213171A (en) * | 1983-05-19 | 1984-12-03 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US5510632A (en) * | 1993-04-19 | 1996-04-23 | General Electric Company | Silicon carbide junction field effect transistor device for high temperature applications |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS54140483A (en) | Semiconductor device | |
| KR950030282A (en) | Manufacturing Method of Thin Film Transistor | |
| JPS5688363A (en) | Field effect transistor | |
| GB1281777A (en) | Field-effect transistor device | |
| JPS5658270A (en) | Junction type field-effect transistor | |
| JPS54146584A (en) | Manufacture of semiconductor device | |
| GB1138771A (en) | Field effect device with overlapping insulated gates | |
| JPS5655074A (en) | Schottky barrier gate type field effect transistor | |
| JPS5633881A (en) | Manufacture of semiconductor device | |
| KR900015371A (en) | Double-gate amorphous silicon thin film transistor and its manufacturing method | |
| JPS5648177A (en) | Junction field effect semiconductor device and its preparation | |
| JPS5694671A (en) | Manufacture of mis field-effect semiconductor device | |
| JPS57177563A (en) | Junction type filed effect transistor and manufacture thereof | |
| JPS5674939A (en) | Preparation method of semiconductor integrated circuit | |
| JPS5715471A (en) | Junction type field effect semiconductor device and manufacture thereof | |
| JPS5626469A (en) | Field-effect transistor | |
| JPS5670669A (en) | Longitudinal semiconductor device | |
| JPS5636167A (en) | Junction-type field-effect semiconductor device and manufacture thereof | |
| JPS575363A (en) | Manufacture of mos type semiconductor device | |
| JPS57207348A (en) | Manufacture of semiconductor device | |
| JPS5490978A (en) | Manufacture for mos type semiconductor device | |
| JPS55117280A (en) | Semiconductor device | |
| JPS55102269A (en) | Method of fabricating semiconductor device | |
| JPS54104784A (en) | Manufacture for isolating gate type semiconductor device | |
| JPS5728365A (en) | Manufacture of schottky barrier field-effect transistor |