JPS5655074A - Schottky barrier gate type field effect transistor - Google Patents
Schottky barrier gate type field effect transistorInfo
- Publication number
- JPS5655074A JPS5655074A JP13117679A JP13117679A JPS5655074A JP S5655074 A JPS5655074 A JP S5655074A JP 13117679 A JP13117679 A JP 13117679A JP 13117679 A JP13117679 A JP 13117679A JP S5655074 A JPS5655074 A JP S5655074A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- source
- field effect
- effect transistor
- type field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910016006 MoSi Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Abstract
PURPOSE:To enable the self-alignment of a source and a drain in a microminiature structure by forming at least a part of an electrode connected directly to the diffused layers of the source and drain of a semiconductor substrate of high melting point metal silicide. CONSTITUTION:Mo and Si are simultaneously evaporated in vacuum on the entire surface of the epitaxial layer 2 of a semiconductor substrate 3, an MoSi film having a thickness of approx. 2,000Angstrom is coated thereon, is then patterned by a photoetching process with CF4 gas plasma as etching means, is brought into direct contact with the layer 2 through an opening 6, and a gate of electrode 7 of MoSi2 extended on an SiO2 film 5 is formed thereon. When a Schottky FET is formed by this means, since the gate electrode 7 is formed of the MoSi2, the source 8 and the drain 9 are self- aligned with respect to the gate electrode 7 to enable a microminiature structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13117679A JPS5655074A (en) | 1979-10-11 | 1979-10-11 | Schottky barrier gate type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13117679A JPS5655074A (en) | 1979-10-11 | 1979-10-11 | Schottky barrier gate type field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5655074A true JPS5655074A (en) | 1981-05-15 |
Family
ID=15051775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13117679A Pending JPS5655074A (en) | 1979-10-11 | 1979-10-11 | Schottky barrier gate type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5655074A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5848968A (en) * | 1981-09-18 | 1983-03-23 | Fujitsu Ltd | Manufacture of semicoductor device |
| JPS58103175A (en) * | 1981-12-15 | 1983-06-20 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
| US4845534A (en) * | 1981-01-30 | 1989-07-04 | Fujitsu Limited | Field effect semiconductor device |
| US5200349A (en) * | 1980-12-30 | 1993-04-06 | Fujitsu Limited | Semiconductor device including schotky gate of silicide and method for the manufacture of the same |
| US5536967A (en) * | 1980-12-30 | 1996-07-16 | Fujitsu Limited | Semiconductor device including Schottky gate of silicide and method for the manufacture of the same |
| US5688704A (en) * | 1995-11-30 | 1997-11-18 | Lucent Technologies Inc. | Integrated circuit fabrication |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS499914A (en) * | 1972-03-30 | 1974-01-29 |
-
1979
- 1979-10-11 JP JP13117679A patent/JPS5655074A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS499914A (en) * | 1972-03-30 | 1974-01-29 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200349A (en) * | 1980-12-30 | 1993-04-06 | Fujitsu Limited | Semiconductor device including schotky gate of silicide and method for the manufacture of the same |
| US5536967A (en) * | 1980-12-30 | 1996-07-16 | Fujitsu Limited | Semiconductor device including Schottky gate of silicide and method for the manufacture of the same |
| US4845534A (en) * | 1981-01-30 | 1989-07-04 | Fujitsu Limited | Field effect semiconductor device |
| JPS5848968A (en) * | 1981-09-18 | 1983-03-23 | Fujitsu Ltd | Manufacture of semicoductor device |
| JPS58103175A (en) * | 1981-12-15 | 1983-06-20 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
| US5688704A (en) * | 1995-11-30 | 1997-11-18 | Lucent Technologies Inc. | Integrated circuit fabrication |
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