JPS54116184A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS54116184A JPS54116184A JP2376678A JP2376678A JPS54116184A JP S54116184 A JPS54116184 A JP S54116184A JP 2376678 A JP2376678 A JP 2376678A JP 2376678 A JP2376678 A JP 2376678A JP S54116184 A JPS54116184 A JP S54116184A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- wiring
- sio
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Conductive Materials (AREA)
Abstract
PURPOSE: To avoid the occurrence of short layer by eliminating the film deficiency such as pin holes, through the use of SiO2 film by thermal oxidation without using gas phase grown SiO2 film as the insulation film between layers for multi-layer wiring.
CONSTITUTION: The source region 51 and the drain region 52 are formed by diffusion on the Si isubstrate 1, gate insulation film 6 is coated on the substrate 1 clipped with the regions, and the polycrystal Si gate electrode 7 is formed on it. Next, the field SiO2 film 8 is coated and the opening is made on a given region, forming the Mo silicide films 93, 91, 92 of the first wiring in contact with the regions 51 and 52 and the electrode 7 and the film 94 of the same material located on the film 8. After, that, the polycrystal Si layer 10 is deposited on the entire surface, and the layer 10 is converted into the SiO2 film 11 being the insulation film between layers with heat treatment under hydrogen combustion gas at 950°C. After that, opening is made on the films 93 and 94 and the second layer Al wiring 12 is coated in contact with it. Thus, the part between the first wiring layers 91, 92 and the second wiring layer 12 are insulated with the film 11 without pin holes.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2376678A JPS54116184A (en) | 1978-03-01 | 1978-03-01 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2376678A JPS54116184A (en) | 1978-03-01 | 1978-03-01 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54116184A true JPS54116184A (en) | 1979-09-10 |
Family
ID=12119456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2376678A Pending JPS54116184A (en) | 1978-03-01 | 1978-03-01 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54116184A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5649542A (en) * | 1979-09-28 | 1981-05-06 | Seiko Epson Corp | Integrated circuit device of mos type |
JPS5650536A (en) * | 1979-10-01 | 1981-05-07 | Seiko Epson Corp | Mos-type integrated circuit device |
JPS57194567A (en) * | 1981-05-27 | 1982-11-30 | Hitachi Ltd | Semiconductor memory device |
JPS582016A (en) * | 1981-06-26 | 1983-01-07 | ティーディーケイ株式会社 | Method of producing thin film capacitance element |
JPS58202553A (en) * | 1982-05-21 | 1983-11-25 | Toshiba Corp | Semiconductor device |
JPS5922346A (en) * | 1982-07-29 | 1984-02-04 | Toshiba Corp | Manufacture of semiconductor device |
JPS6041218A (en) * | 1983-08-16 | 1985-03-04 | Sony Corp | Formation of molybdenum silicide electrode |
JPS61212040A (en) * | 1985-03-18 | 1986-09-20 | Hitachi Ltd | Manufacture of semiconductor device |
JPS6486551A (en) * | 1988-05-27 | 1989-03-31 | Hitachi Ltd | Semiconductor storage device |
JPH0198255A (en) * | 1988-05-27 | 1989-04-17 | Hitachi Ltd | Semiconductor memory |
JPH0198256A (en) * | 1988-05-27 | 1989-04-17 | Hitachi Ltd | Semiconductor memory |
-
1978
- 1978-03-01 JP JP2376678A patent/JPS54116184A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5649542A (en) * | 1979-09-28 | 1981-05-06 | Seiko Epson Corp | Integrated circuit device of mos type |
JPS5650536A (en) * | 1979-10-01 | 1981-05-07 | Seiko Epson Corp | Mos-type integrated circuit device |
JPS57194567A (en) * | 1981-05-27 | 1982-11-30 | Hitachi Ltd | Semiconductor memory device |
JPS582016A (en) * | 1981-06-26 | 1983-01-07 | ティーディーケイ株式会社 | Method of producing thin film capacitance element |
JPS58202553A (en) * | 1982-05-21 | 1983-11-25 | Toshiba Corp | Semiconductor device |
JPS5922346A (en) * | 1982-07-29 | 1984-02-04 | Toshiba Corp | Manufacture of semiconductor device |
JPS6041218A (en) * | 1983-08-16 | 1985-03-04 | Sony Corp | Formation of molybdenum silicide electrode |
JPS61212040A (en) * | 1985-03-18 | 1986-09-20 | Hitachi Ltd | Manufacture of semiconductor device |
JPH0789549B2 (en) * | 1985-03-18 | 1995-09-27 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
JPS6486551A (en) * | 1988-05-27 | 1989-03-31 | Hitachi Ltd | Semiconductor storage device |
JPH0198255A (en) * | 1988-05-27 | 1989-04-17 | Hitachi Ltd | Semiconductor memory |
JPH0198256A (en) * | 1988-05-27 | 1989-04-17 | Hitachi Ltd | Semiconductor memory |
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