JPS54116184A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54116184A
JPS54116184A JP2376678A JP2376678A JPS54116184A JP S54116184 A JPS54116184 A JP S54116184A JP 2376678 A JP2376678 A JP 2376678A JP 2376678 A JP2376678 A JP 2376678A JP S54116184 A JPS54116184 A JP S54116184A
Authority
JP
Japan
Prior art keywords
film
layer
wiring
sio
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2376678A
Other languages
Japanese (ja)
Inventor
Shinobu Fukunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2376678A priority Critical patent/JPS54116184A/en
Publication of JPS54116184A publication Critical patent/JPS54116184A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)

Abstract

PURPOSE: To avoid the occurrence of short layer by eliminating the film deficiency such as pin holes, through the use of SiO2 film by thermal oxidation without using gas phase grown SiO2 film as the insulation film between layers for multi-layer wiring.
CONSTITUTION: The source region 51 and the drain region 52 are formed by diffusion on the Si isubstrate 1, gate insulation film 6 is coated on the substrate 1 clipped with the regions, and the polycrystal Si gate electrode 7 is formed on it. Next, the field SiO2 film 8 is coated and the opening is made on a given region, forming the Mo silicide films 93, 91, 92 of the first wiring in contact with the regions 51 and 52 and the electrode 7 and the film 94 of the same material located on the film 8. After, that, the polycrystal Si layer 10 is deposited on the entire surface, and the layer 10 is converted into the SiO2 film 11 being the insulation film between layers with heat treatment under hydrogen combustion gas at 950°C. After that, opening is made on the films 93 and 94 and the second layer Al wiring 12 is coated in contact with it. Thus, the part between the first wiring layers 91, 92 and the second wiring layer 12 are insulated with the film 11 without pin holes.
COPYRIGHT: (C)1979,JPO&Japio
JP2376678A 1978-03-01 1978-03-01 Manufacture for semiconductor device Pending JPS54116184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2376678A JPS54116184A (en) 1978-03-01 1978-03-01 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2376678A JPS54116184A (en) 1978-03-01 1978-03-01 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS54116184A true JPS54116184A (en) 1979-09-10

Family

ID=12119456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2376678A Pending JPS54116184A (en) 1978-03-01 1978-03-01 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54116184A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649542A (en) * 1979-09-28 1981-05-06 Seiko Epson Corp Integrated circuit device of mos type
JPS5650536A (en) * 1979-10-01 1981-05-07 Seiko Epson Corp Mos-type integrated circuit device
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
JPS582016A (en) * 1981-06-26 1983-01-07 ティーディーケイ株式会社 Method of producing thin film capacitance element
JPS58202553A (en) * 1982-05-21 1983-11-25 Toshiba Corp Semiconductor device
JPS5922346A (en) * 1982-07-29 1984-02-04 Toshiba Corp Manufacture of semiconductor device
JPS6041218A (en) * 1983-08-16 1985-03-04 Sony Corp Formation of molybdenum silicide electrode
JPS61212040A (en) * 1985-03-18 1986-09-20 Hitachi Ltd Manufacture of semiconductor device
JPS6486551A (en) * 1988-05-27 1989-03-31 Hitachi Ltd Semiconductor storage device
JPH0198255A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory
JPH0198256A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649542A (en) * 1979-09-28 1981-05-06 Seiko Epson Corp Integrated circuit device of mos type
JPS5650536A (en) * 1979-10-01 1981-05-07 Seiko Epson Corp Mos-type integrated circuit device
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
JPS582016A (en) * 1981-06-26 1983-01-07 ティーディーケイ株式会社 Method of producing thin film capacitance element
JPS58202553A (en) * 1982-05-21 1983-11-25 Toshiba Corp Semiconductor device
JPS5922346A (en) * 1982-07-29 1984-02-04 Toshiba Corp Manufacture of semiconductor device
JPS6041218A (en) * 1983-08-16 1985-03-04 Sony Corp Formation of molybdenum silicide electrode
JPS61212040A (en) * 1985-03-18 1986-09-20 Hitachi Ltd Manufacture of semiconductor device
JPH0789549B2 (en) * 1985-03-18 1995-09-27 株式会社日立製作所 Method for manufacturing semiconductor device
JPS6486551A (en) * 1988-05-27 1989-03-31 Hitachi Ltd Semiconductor storage device
JPH0198255A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory
JPH0198256A (en) * 1988-05-27 1989-04-17 Hitachi Ltd Semiconductor memory

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