JPS5488085A - Nanufacture for semiconductor device - Google Patents

Nanufacture for semiconductor device

Info

Publication number
JPS5488085A
JPS5488085A JP15681277A JP15681277A JPS5488085A JP S5488085 A JPS5488085 A JP S5488085A JP 15681277 A JP15681277 A JP 15681277A JP 15681277 A JP15681277 A JP 15681277A JP S5488085 A JPS5488085 A JP S5488085A
Authority
JP
Japan
Prior art keywords
film
opening
stage
open
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15681277A
Other languages
Japanese (ja)
Other versions
JPS5531626B2 (en
Inventor
Shigeru Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15681277A priority Critical patent/JPS5488085A/en
Priority to US05/969,007 priority patent/US4210689A/en
Priority to GB7848841A priority patent/GB2014361B/en
Priority to DE2855823A priority patent/DE2855823C2/en
Publication of JPS5488085A publication Critical patent/JPS5488085A/en
Publication of JPS5531626B2 publication Critical patent/JPS5531626B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To prevent the occurrence of open stage, even with the nitride film remained, by accurate opening through the utilization of self-alignment technology and the forming of insulation film sufficiently thick.
CONSTITUTION: The CVD SiO2 35 is thickly formed on the thermal oxidation thin film 34 of the N type Si substrate 31 providing the P base layer 32 of protection ring type, and selective opening is made by using the etching speed difference. Succeedingly, the films 35 and 33 are unified with high temperature treatment. Next, Si3N4 38 is laminated and openings 39, 40 are made with accuracy and smaller in the opening of the film 35, and the window 43 is formed by etching with the resist mask 41. In this case, since the film 34 is thin, the eaves by the nitride film 38 is small and no open stage is caused at electrode coating. The N type doped polycrystal Si 45 is selectively formed and the emitter layer 44 is provided with thermal diffusion, the base electrode window 46 is formed the opening 40, forming the electrodes 47 and 48. Thus, the thickness of the insulation film can sufficiently be made thick, accurate opening is possible, no stage open is caused even with the nitride film remained, allowing to form the electrodes without open stage.
COPYRIGHT: (C)1979,JPO&Japio
JP15681277A 1977-12-26 1977-12-26 Nanufacture for semiconductor device Granted JPS5488085A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15681277A JPS5488085A (en) 1977-12-26 1977-12-26 Nanufacture for semiconductor device
US05/969,007 US4210689A (en) 1977-12-26 1978-12-13 Method of producing semiconductor devices
GB7848841A GB2014361B (en) 1977-12-26 1978-12-18 Method of producing semiconductor devices
DE2855823A DE2855823C2 (en) 1977-12-26 1978-12-22 Process for manufacturing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15681277A JPS5488085A (en) 1977-12-26 1977-12-26 Nanufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5488085A true JPS5488085A (en) 1979-07-12
JPS5531626B2 JPS5531626B2 (en) 1980-08-19

Family

ID=15635857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15681277A Granted JPS5488085A (en) 1977-12-26 1977-12-26 Nanufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5488085A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642367A (en) * 1979-09-14 1981-04-20 Toshiba Corp Manufacture of bipolar integrated circuit
JPS5734359A (en) * 1980-08-08 1982-02-24 Toshiba Corp Semiconductor device and manufacture thereof
JPS59155961A (en) * 1983-02-25 1984-09-05 Rohm Co Ltd Manufacture of semiconductor device
JPS60218873A (en) * 1984-04-13 1985-11-01 Rohm Co Ltd Manufacture of semiconductor device
JPS61236162A (en) * 1985-04-11 1986-10-21 Rohm Co Ltd Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642367A (en) * 1979-09-14 1981-04-20 Toshiba Corp Manufacture of bipolar integrated circuit
JPS5734359A (en) * 1980-08-08 1982-02-24 Toshiba Corp Semiconductor device and manufacture thereof
JPS59155961A (en) * 1983-02-25 1984-09-05 Rohm Co Ltd Manufacture of semiconductor device
JPS60218873A (en) * 1984-04-13 1985-11-01 Rohm Co Ltd Manufacture of semiconductor device
JPS61236162A (en) * 1985-04-11 1986-10-21 Rohm Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5531626B2 (en) 1980-08-19

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