JPS5488085A - Nanufacture for semiconductor device - Google Patents
Nanufacture for semiconductor deviceInfo
- Publication number
- JPS5488085A JPS5488085A JP15681277A JP15681277A JPS5488085A JP S5488085 A JPS5488085 A JP S5488085A JP 15681277 A JP15681277 A JP 15681277A JP 15681277 A JP15681277 A JP 15681277A JP S5488085 A JPS5488085 A JP S5488085A
- Authority
- JP
- Japan
- Prior art keywords
- film
- opening
- stage
- open
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To prevent the occurrence of open stage, even with the nitride film remained, by accurate opening through the utilization of self-alignment technology and the forming of insulation film sufficiently thick.
CONSTITUTION: The CVD SiO2 35 is thickly formed on the thermal oxidation thin film 34 of the N type Si substrate 31 providing the P base layer 32 of protection ring type, and selective opening is made by using the etching speed difference. Succeedingly, the films 35 and 33 are unified with high temperature treatment. Next, Si3N4 38 is laminated and openings 39, 40 are made with accuracy and smaller in the opening of the film 35, and the window 43 is formed by etching with the resist mask 41. In this case, since the film 34 is thin, the eaves by the nitride film 38 is small and no open stage is caused at electrode coating. The N type doped polycrystal Si 45 is selectively formed and the emitter layer 44 is provided with thermal diffusion, the base electrode window 46 is formed the opening 40, forming the electrodes 47 and 48. Thus, the thickness of the insulation film can sufficiently be made thick, accurate opening is possible, no stage open is caused even with the nitride film remained, allowing to form the electrodes without open stage.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15681277A JPS5488085A (en) | 1977-12-26 | 1977-12-26 | Nanufacture for semiconductor device |
US05/969,007 US4210689A (en) | 1977-12-26 | 1978-12-13 | Method of producing semiconductor devices |
GB7848841A GB2014361B (en) | 1977-12-26 | 1978-12-18 | Method of producing semiconductor devices |
DE2855823A DE2855823C2 (en) | 1977-12-26 | 1978-12-22 | Process for manufacturing semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15681277A JPS5488085A (en) | 1977-12-26 | 1977-12-26 | Nanufacture for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5488085A true JPS5488085A (en) | 1979-07-12 |
JPS5531626B2 JPS5531626B2 (en) | 1980-08-19 |
Family
ID=15635857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15681277A Granted JPS5488085A (en) | 1977-12-26 | 1977-12-26 | Nanufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5488085A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5642367A (en) * | 1979-09-14 | 1981-04-20 | Toshiba Corp | Manufacture of bipolar integrated circuit |
JPS5734359A (en) * | 1980-08-08 | 1982-02-24 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS59155961A (en) * | 1983-02-25 | 1984-09-05 | Rohm Co Ltd | Manufacture of semiconductor device |
JPS60218873A (en) * | 1984-04-13 | 1985-11-01 | Rohm Co Ltd | Manufacture of semiconductor device |
JPS61236162A (en) * | 1985-04-11 | 1986-10-21 | Rohm Co Ltd | Manufacture of semiconductor device |
-
1977
- 1977-12-26 JP JP15681277A patent/JPS5488085A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5642367A (en) * | 1979-09-14 | 1981-04-20 | Toshiba Corp | Manufacture of bipolar integrated circuit |
JPS5734359A (en) * | 1980-08-08 | 1982-02-24 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS59155961A (en) * | 1983-02-25 | 1984-09-05 | Rohm Co Ltd | Manufacture of semiconductor device |
JPS60218873A (en) * | 1984-04-13 | 1985-11-01 | Rohm Co Ltd | Manufacture of semiconductor device |
JPS61236162A (en) * | 1985-04-11 | 1986-10-21 | Rohm Co Ltd | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5531626B2 (en) | 1980-08-19 |
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