JPS5480684A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5480684A JPS5480684A JP14833477A JP14833477A JPS5480684A JP S5480684 A JPS5480684 A JP S5480684A JP 14833477 A JP14833477 A JP 14833477A JP 14833477 A JP14833477 A JP 14833477A JP S5480684 A JPS5480684 A JP S5480684A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- insulation film
- substrate
- major plane
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To avoid the area reduction of electrode formed on the substrate major plane and scaling, by coating the corrosion proof film rich in the corrosion proof than the substrate on the first major plane being the shoulder of grooves in advance, before etching the grooves passing through the PN junction.
CONSTITUTION: The inorganic insulation film 5 is selectively coated on the part being the both shoulders of the grooves 2 on the first major plane 1e of the silicon substrate, and nickel is coated on the entire surface of the part where no insulation film 5 of the major plane 1e is coated and the sencond major plane 1f thinner than 0.2 μm than the insulation film 5, and the temperature of the substrate 1 attaching the electrode 2 is increased to 750°C. Photo resist 3 is coated on the electrode 2 and the insulation film 5 and only the photo resist on the electrode 2 clipped with the insulation film 5 is removed with photo etching method. Next, the electrode 2 is selectively etched, forming the groove 1g passing through the PN junction plane 1d of the internal part of the substrate 1. After that, at the inner wall of the groove 1g, low melting point inorganic glass 4 is molten at 700°C so that it covers the junction surface 1d.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14833477A JPS5480684A (en) | 1977-12-09 | 1977-12-09 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14833477A JPS5480684A (en) | 1977-12-09 | 1977-12-09 | Manufacture for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5480684A true JPS5480684A (en) | 1979-06-27 |
JPS6161254B2 JPS6161254B2 (en) | 1986-12-24 |
Family
ID=15450438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14833477A Granted JPS5480684A (en) | 1977-12-09 | 1977-12-09 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5480684A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6365627A (en) * | 1986-09-05 | 1988-03-24 | Rohm Co Ltd | Etching process of semiconductor substrate |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0297710U (en) * | 1989-01-17 | 1990-08-03 | ||
JPH02119302U (en) * | 1989-03-13 | 1990-09-26 |
-
1977
- 1977-12-09 JP JP14833477A patent/JPS5480684A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6365627A (en) * | 1986-09-05 | 1988-03-24 | Rohm Co Ltd | Etching process of semiconductor substrate |
Also Published As
Publication number | Publication date |
---|---|
JPS6161254B2 (en) | 1986-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5492175A (en) | Manufacture of semiconductor device | |
JPS5480684A (en) | Manufacture for semiconductor device | |
JPS53135263A (en) | Production of semiconductor device | |
JPS54139493A (en) | Manufacture of semiconductor device containing poly-crystal silicon layer | |
JPS5488085A (en) | Nanufacture for semiconductor device | |
JPS52124860A (en) | Electrode formation method for semiconductor devices | |
JPS5575259A (en) | Manufacturing method of semiconductor device | |
JPS5568653A (en) | Manufacturing method of semiconductor device | |
JPS52117079A (en) | Preparation of semiconductor device | |
JPS551129A (en) | Manufacture of semiconductor device | |
JPS5527659A (en) | Method of manufacturing semiconductor device | |
JPS5575243A (en) | Method of fabricating mis semiconductor device having two-layer polycrystalline silicon wired layer | |
JPS56104476A (en) | Manufacture of semiconductor device | |
JPS5488082A (en) | Manufacture for semiconductor device | |
JPS5372473A (en) | Manufacture of mis type semicondctor device | |
JPS566448A (en) | Mos type integrated circuit device | |
JPS5593236A (en) | Semiconductor device | |
JPS56148825A (en) | Manufacture of semiconductor device | |
JPS5291385A (en) | Semiconductor device | |
JPS5637679A (en) | Manufacture of semiconductor device | |
JPS543472A (en) | Manufacture of semiconductor device | |
JPS52147982A (en) | Manufacture of mos-type semiconductor ic unit | |
JPS57106048A (en) | Manufacture of semiconductor device | |
JPS5585030A (en) | Forming method for electrode of semiconductor device | |
JPS52106694A (en) | Preparation for semiconductor device |