JPS5480684A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5480684A
JPS5480684A JP14833477A JP14833477A JPS5480684A JP S5480684 A JPS5480684 A JP S5480684A JP 14833477 A JP14833477 A JP 14833477A JP 14833477 A JP14833477 A JP 14833477A JP S5480684 A JPS5480684 A JP S5480684A
Authority
JP
Japan
Prior art keywords
electrode
insulation film
substrate
major plane
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14833477A
Other languages
Japanese (ja)
Other versions
JPS6161254B2 (en
Inventor
Kazuo Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14833477A priority Critical patent/JPS5480684A/en
Publication of JPS5480684A publication Critical patent/JPS5480684A/en
Publication of JPS6161254B2 publication Critical patent/JPS6161254B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To avoid the area reduction of electrode formed on the substrate major plane and scaling, by coating the corrosion proof film rich in the corrosion proof than the substrate on the first major plane being the shoulder of grooves in advance, before etching the grooves passing through the PN junction.
CONSTITUTION: The inorganic insulation film 5 is selectively coated on the part being the both shoulders of the grooves 2 on the first major plane 1e of the silicon substrate, and nickel is coated on the entire surface of the part where no insulation film 5 of the major plane 1e is coated and the sencond major plane 1f thinner than 0.2 μm than the insulation film 5, and the temperature of the substrate 1 attaching the electrode 2 is increased to 750°C. Photo resist 3 is coated on the electrode 2 and the insulation film 5 and only the photo resist on the electrode 2 clipped with the insulation film 5 is removed with photo etching method. Next, the electrode 2 is selectively etched, forming the groove 1g passing through the PN junction plane 1d of the internal part of the substrate 1. After that, at the inner wall of the groove 1g, low melting point inorganic glass 4 is molten at 700°C so that it covers the junction surface 1d.
COPYRIGHT: (C)1979,JPO&Japio
JP14833477A 1977-12-09 1977-12-09 Manufacture for semiconductor device Granted JPS5480684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14833477A JPS5480684A (en) 1977-12-09 1977-12-09 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14833477A JPS5480684A (en) 1977-12-09 1977-12-09 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5480684A true JPS5480684A (en) 1979-06-27
JPS6161254B2 JPS6161254B2 (en) 1986-12-24

Family

ID=15450438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14833477A Granted JPS5480684A (en) 1977-12-09 1977-12-09 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5480684A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6365627A (en) * 1986-09-05 1988-03-24 Rohm Co Ltd Etching process of semiconductor substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0297710U (en) * 1989-01-17 1990-08-03
JPH02119302U (en) * 1989-03-13 1990-09-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6365627A (en) * 1986-09-05 1988-03-24 Rohm Co Ltd Etching process of semiconductor substrate

Also Published As

Publication number Publication date
JPS6161254B2 (en) 1986-12-24

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