JPS57159058A - Manufacture of semiconductor memory - Google Patents

Manufacture of semiconductor memory

Info

Publication number
JPS57159058A
JPS57159058A JP4379381A JP4379381A JPS57159058A JP S57159058 A JPS57159058 A JP S57159058A JP 4379381 A JP4379381 A JP 4379381A JP 4379381 A JP4379381 A JP 4379381A JP S57159058 A JPS57159058 A JP S57159058A
Authority
JP
Japan
Prior art keywords
data
rom
pattern
film
psg film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4379381A
Other languages
Japanese (ja)
Other versions
JPS612302B2 (en
Inventor
Kazunari Shirai
Izumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4379381A priority Critical patent/JPS57159058A/en
Publication of JPS57159058A publication Critical patent/JPS57159058A/en
Publication of JPS612302B2 publication Critical patent/JPS612302B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/34—Source electrode or drain electrode programmed

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To form the wiring and obtain the required ROM easily after the impuriteies are introduced corresponding to the memory data through a window by a method wherein the insulating film having all the electrode windows is formed on the semiconductor substrate whereon the transistor is formed when the mask ROM is manufactured. CONSTITUTION:At first the multiple memory cells comprising the MOS transistors are formed onthe P type Si substrate 1 by means of the conventional process. Then after the PSG film 11 is formed on the MOS transistor comprising the memory cells, the pattern comprising the photoresist film 12 is formed on said PSG film 11 and the plasma etching is performed using said pattern as a mask. Through these procedures, after the windows are provided on all the electrode regions of the MOS transistor, the impurities are ion implanted through the window corresponding to the memory data and the data are written in. Finally when the resist pattern 13 is removed and the wiring 14 comprising Al is formed on the PSG film 11, the ROM having the required data is easily obtained.
JP4379381A 1981-03-25 1981-03-25 Manufacture of semiconductor memory Granted JPS57159058A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4379381A JPS57159058A (en) 1981-03-25 1981-03-25 Manufacture of semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4379381A JPS57159058A (en) 1981-03-25 1981-03-25 Manufacture of semiconductor memory

Publications (2)

Publication Number Publication Date
JPS57159058A true JPS57159058A (en) 1982-10-01
JPS612302B2 JPS612302B2 (en) 1986-01-23

Family

ID=12673616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4379381A Granted JPS57159058A (en) 1981-03-25 1981-03-25 Manufacture of semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57159058A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8596418B2 (en) 2004-10-04 2013-12-03 Baier & Koppel Gmbh & Co. Automatic lubrication apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63277103A (en) * 1987-05-01 1988-11-15 Nippon Spindle Mfg Co Ltd Large waste crushing transport vehicle

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8596418B2 (en) 2004-10-04 2013-12-03 Baier & Koppel Gmbh & Co. Automatic lubrication apparatus

Also Published As

Publication number Publication date
JPS612302B2 (en) 1986-01-23

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