JPS57159058A - Manufacture of semiconductor memory - Google Patents
Manufacture of semiconductor memoryInfo
- Publication number
- JPS57159058A JPS57159058A JP4379381A JP4379381A JPS57159058A JP S57159058 A JPS57159058 A JP S57159058A JP 4379381 A JP4379381 A JP 4379381A JP 4379381 A JP4379381 A JP 4379381A JP S57159058 A JPS57159058 A JP S57159058A
- Authority
- JP
- Japan
- Prior art keywords
- data
- rom
- pattern
- film
- psg film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/34—Source electrode or drain electrode programmed
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To form the wiring and obtain the required ROM easily after the impuriteies are introduced corresponding to the memory data through a window by a method wherein the insulating film having all the electrode windows is formed on the semiconductor substrate whereon the transistor is formed when the mask ROM is manufactured. CONSTITUTION:At first the multiple memory cells comprising the MOS transistors are formed onthe P type Si substrate 1 by means of the conventional process. Then after the PSG film 11 is formed on the MOS transistor comprising the memory cells, the pattern comprising the photoresist film 12 is formed on said PSG film 11 and the plasma etching is performed using said pattern as a mask. Through these procedures, after the windows are provided on all the electrode regions of the MOS transistor, the impurities are ion implanted through the window corresponding to the memory data and the data are written in. Finally when the resist pattern 13 is removed and the wiring 14 comprising Al is formed on the PSG film 11, the ROM having the required data is easily obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4379381A JPS57159058A (en) | 1981-03-25 | 1981-03-25 | Manufacture of semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4379381A JPS57159058A (en) | 1981-03-25 | 1981-03-25 | Manufacture of semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57159058A true JPS57159058A (en) | 1982-10-01 |
JPS612302B2 JPS612302B2 (en) | 1986-01-23 |
Family
ID=12673616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4379381A Granted JPS57159058A (en) | 1981-03-25 | 1981-03-25 | Manufacture of semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57159058A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8596418B2 (en) | 2004-10-04 | 2013-12-03 | Baier & Koppel Gmbh & Co. | Automatic lubrication apparatus |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63277103A (en) * | 1987-05-01 | 1988-11-15 | Nippon Spindle Mfg Co Ltd | Large waste crushing transport vehicle |
-
1981
- 1981-03-25 JP JP4379381A patent/JPS57159058A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8596418B2 (en) | 2004-10-04 | 2013-12-03 | Baier & Koppel Gmbh & Co. | Automatic lubrication apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS612302B2 (en) | 1986-01-23 |
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