JPS5996777A - Photovoltaic element - Google Patents
Photovoltaic elementInfo
- Publication number
- JPS5996777A JPS5996777A JP57207395A JP20739582A JPS5996777A JP S5996777 A JPS5996777 A JP S5996777A JP 57207395 A JP57207395 A JP 57207395A JP 20739582 A JP20739582 A JP 20739582A JP S5996777 A JPS5996777 A JP S5996777A
- Authority
- JP
- Japan
- Prior art keywords
- photovoltaic element
- photovoltaic device
- photovoltaic
- layer
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 229910005542 GaSb Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910005091 Si3N Inorganic materials 0.000 claims 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 27
- 238000010586 diagram Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】 （技術分野） 本発明は、光を電気に変換する光起電力素子に関する。[Detailed description of the invention] (Technical field) The present invention relates to a photovoltaic device that converts light into electricity.
（背景技術）
従来、光起電力素子として結晶シリコン（以下ｃ−５ｉ
と記す）、結晶ガリウムヒ素（以下ｃ −ＧａＡｓと記
す）およびアモルファスシリコン（以下ａ−３ｉと記す
）などが利用されておりこれらを用いた光起電力素子は
公知である。(Background technology) Conventionally, crystalline silicon (hereinafter referred to as C-5i) has been used as a photovoltaic element.
), crystalline gallium arsenide (hereinafter referred to as c-GaAs), amorphous silicon (hereinafter referred to as a-3i), etc., and photovoltaic elements using these are well known.
しかるに、上記の光起電力素子のエネルギー・ギャップ
は例えばｃ−５ｉ 、 ｃ−ＧａＡｓ、 ａ−３ｉ各々
１，１１ｅＶ、１．４．３ ｅＶ、１．８ｅｖと材料固
有であるため、光起電力素子として光を利用できる波長
範囲に自ら制約があった。殊に太陽光の如き広い波長範
囲を有する光を有効に電気として・とり出すにはエネル
ギーギャップが固有であることが高変換効率化の太ぎな
妨げとなっていた。However, since the energy gaps of the above photovoltaic elements are material-specific, e.g. 1.11 eV, 1.4.3 eV, and 1.8 eV for c-5i, c-GaAs, and a-3i, respectively, the photovoltaic There were limitations on the wavelength range in which light could be used as an element. In particular, the energy gap inherent in effectively converting and extracting light with a wide wavelength range, such as sunlight, into electricity has been a major hindrance to achieving high conversion efficiency.
従来の光起電力素子の欠点を明らかにするため従来の光
起電力素子の一例として第１図にａ−５ｉ光起電力素子
の構造図（Ａ）とエネルギー・バンド図（Ｂ）を、また
従来の光起電力素子の他の例として第２図にｃ−５ｉ光
起電力素子の構造図１Ａ）とエネルギー・バンド図（Ｂ
）を示す。ａ −Ｓ ｉ光起電力素子は１層１．１層２
．９層３で構成される。この素子に０層１側から光４が
入射した場合、光４のうち短波長光５は１層２中で吸収
され電気に変換されるが、ａ−５ｉのエネルギー・ギャ
ップよりも小さいエネルギーを有する長波長光６は吸収
されずに透過してしまうためａ−５ｉ光起電力素子のみ
では光４・を有効に利用できない欠点があった。In order to clarify the drawbacks of conventional photovoltaic devices, Figure 1 shows a structural diagram (A) and an energy band diagram (B) of an a-5i photovoltaic device as an example of a conventional photovoltaic device. As another example of a conventional photovoltaic device, Fig. 2 shows a structural diagram 1A) and an energy band diagram (B) of a c-5i photovoltaic device.
) is shown. a-Si photovoltaic element has 1 layer 1.1 layer 2
．． It is composed of 9 layers and 3 layers. When light 4 enters this element from the 0 layer 1 side, the short wavelength light 5 of the light 4 is absorbed in the 1 layer 2 and converted into electricity, but the energy is smaller than the energy gap of a-5i. Since the long wavelength light 6 contained in the photovoltaic device is transmitted without being absorbed, the a-5i photovoltaic element alone has the disadvantage that the light 4 cannot be used effectively.
また、第２図ｎ層７および９層８からなるｃ −５ｉ光
起電力素子では、エネルギー・ギャップが小さいため短
波長光５のみならず長波長光６も吸収され電気に変換さ
れるが、短波長光５のエネルギーはｃ−８ｌのエネルギ
ー・ギャップより太きいため、吸収された短波長光５の
エネルギーの一部は価電子帯下端９へ電子が遷移する際
に熱に変換し損失となるためｃ−５ｌ光起電力素子のみ
では光４を有効に利用できない欠点があった。Furthermore, in the c-5i photovoltaic element consisting of the n layer 7 and the nine layers 8 in FIG. 2, the energy gap is small, so not only the short wavelength light 5 but also the long wavelength light 6 is absorbed and converted into electricity. Since the energy of the short wavelength light 5 is larger than the energy gap of c-8l, a part of the energy of the absorbed short wavelength light 5 is converted into heat when electrons transition to the lower end of the valence band 9, resulting in loss. Therefore, the C-5L photovoltaic element alone has the disadvantage that the light 4 cannot be used effectively.
上述の如く、従来の光起電力素子は、エネルギー・ギャ
ップが固有であるため、入射する光が太陽光の如く種々
の波長を有する場合、光を電気に有効に変換できない欠
点があった。As described above, conventional photovoltaic devices have a disadvantage that they cannot effectively convert light into electricity when incident light has various wavelengths, such as sunlight, because of their inherent energy gap.
（発明の開示）
本発明は上記の欠点を鑑みなされたもので、本発明の目
的は、光を有効に電気に変換する光起電力素子を提供す
ることにある。(Disclosure of the Invention) The present invention has been made in view of the above drawbacks, and an object of the present invention is to provide a photovoltaic element that effectively converts light into electricity.
本発明者は、上記目白（を達成せんと検討を行なった結
果、アモルファス光起電力素子およびアモルファス・シ
リコンよりエネルギー・ギャップの小さい半導体光起電
力素子を光学的に直列に接続構成することにより、目的
にかなう光起電力素子が得られることを見出した。As a result of conducting studies to achieve the above-mentioned objective, the inventors of the present invention discovered that by optically connecting in series an amorphous photovoltaic element and a semiconductor photovoltaic element with a smaller energy gap than amorphous silicon, It has been found that a photovoltaic device suitable for the purpose can be obtained.
以下、本発明の具体的実施例を図を用いて詳細に説明す
る。Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings.
本発明による一実施例を第３図に示す。第３図に示した
光起電力素子はａ−５ｉ光起電力素子１０とａ−５ｉよ
りエネルギー・ギャップの小さい半導体光起電力素子と
して（−３ｉ光起電力素子１１で構成され、さらにａ
−Ｓ ｉ光起電力素子１０は１層１．１層２および９層
３からなり、またｃ−５ｉ光起電力素子１１はｎ層７お
よび９層８からなる。An embodiment according to the present invention is shown in FIG. The photovoltaic device shown in FIG.
-Si photovoltaic element 10 consists of 1 layer 1, 1 layer 2 and 9 layers 3, and c-5i photovoltaic element 11 consists of n layer 7 and 9 layers 8.
第３図に示した光起電力素子にａ−３ｉ光起電力素子Ｉ
Ｏ側から光４が入射すると、光４のうち短波長光５はａ
−５ｉ光起電力素子１０内で吸収され電気に変換され
る。このときａ −Ｓ ｉのエネルギー・ギャップは前
述の如＜１．８ｅＶと太きいため第１図において述べた
ように損失なく短波長光５を電気に変換することができ
る。−力先４のうち長波長光６はａ−３ｉ光起電力素子
を透過し、ｃ−５ｉ光起電力素子１１内で吸収され電気
に変換される。A-3i photovoltaic element I is added to the photovoltaic element shown in Figure 3.
When light 4 enters from the O side, short wavelength light 5 of light 4 is a
-5i It is absorbed within the photovoltaic element 10 and converted into electricity. At this time, since the energy gap of a-Si is as large as <1.8 eV as described above, the short wavelength light 5 can be converted into electricity without loss as described in FIG. - Long wavelength light 6 of the force tip 4 passes through the a-3i photovoltaic element, is absorbed within the c-5i photovoltaic element 11, and is converted into electricity.
ａ−５ｉ光起電力素子１０内で生成−した正孔およびｃ
−５ｉ光起電力素子１１内で生成した電子は各々の光起
電力素子内での内部電界によりａ−５ｉ光起電力素子Ｉ
Ｏとｃ−５ｉ光起電力素子１１との界面に蓮し、前記界
面にて再結合し、ａ−５ｉ光起電力素子１０内で生成し
た電子およびＣ−８ｌ光起電力素子ｌｌ内で生成した正
孔は外部へとり出すことができる。a-5i Holes generated within the photovoltaic element 10 and c
Electrons generated within the -5i photovoltaic element 11 are transferred to the a-5i photovoltaic element I due to the internal electric field within each photovoltaic element.
Electrons generated in the a-5i photovoltaic element 10 and electrons generated in the C-8l photovoltaic element The holes can be taken out to the outside.
第１図および第２図に示した従来の光起電力素子にＡ
Ｍ ｌ 、 １００ ｍＷ／ｃｍ”の強度を有する光を
入射したところ、それぞれ光電変換効率は７．２％オ工
ヒ１２．５％であったのに対し、第３図に示した本発明
による光起電力素子に上記の光を入射した・場合、光電
変換効率は１６．４％であった。In the conventional photovoltaic device shown in Figs. 1 and 2,
When light having an intensity of M l and 100 mW/cm was incident, the photoelectric conversion efficiency was 7.2% and 12.5%, whereas the photoelectric conversion efficiency of the present invention shown in FIG. When the above light was incident on the photovoltaic element, the photoelectric conversion efficiency was 16.4%.
以上は半導体光起電力素子がｃ−５ｉである場合につい
て述べたが、ａ−５ｉよりエネルギー・ギャップの小さ
い半導体光起電力素子であればｃ −５ｉに限らないこ
とは明らかである。Although the case where the semiconductor photovoltaic element is c-5i has been described above, it is clear that the semiconductor photovoltaic element is not limited to c-5i as long as it has a smaller energy gap than a-5i.
また、本発明の一実施例ではアモルファス光起電力素子
としてａ−５ｉ光起電力素子を取り上げたがａ−５ｉ以
外のアモルファス光起電力素子でも同様の効果を得るこ
とができる。Further, in one embodiment of the present invention, an a-5i photovoltaic device is used as an amorphous photovoltaic device, but similar effects can be obtained with amorphous photovoltaic devices other than a-5i.
さらに、半導体光起電力素子が結晶Ｇｅ（０，６６ｅＶ
）（カッコ内はエネルギー・ギャップを示す）結晶Ｇａ
Ａｓ（１，４３ｅＶ） 、結晶ＧａＳｂ （０，６８ｅ
■）、結晶１ｎＰ（１，２７ｅＶ） 、結晶１ｎＡｓ
（０，３６ｅＶ）、結晶１ｎＳｂ （０，１７ｅＶ）、
結晶ＣｄＴｅ （１，４４ｅＶ） 、結晶ＰｂＴｅ （
０，２９ｅＶ）、結晶Ｃｕ２Ｓ （１，２ｅＶ）などか
らなる結晶半導体光起電力素子であってもよいことは明
白である。また、アモルファス光起電力素子と半導体光
起電力素子との間に、透明膜を設けても同様の効果を得
ることができるのは明らかである。Furthermore, the semiconductor photovoltaic device is crystalline Ge (0.66 eV
) (The energy gap is shown in parentheses) Crystal Ga
As (1,43eV), crystalline GaSb (0,68e
■), crystal 1nP (1,27eV), crystal 1nAs
(0,36eV), crystal 1nSb (0,17eV),
Crystalline CdTe (1,44eV), Crystalline PbTe (
It is clear that a crystalline semiconductor photovoltaic device made of crystalline Cu2S (0.29eV), crystalline Cu2S (1.2eV), etc. may also be used. Furthermore, it is clear that the same effect can be obtained even if a transparent film is provided between the amorphous photovoltaic element and the semiconductor photovoltaic element.
さらに、前記透明膜がＩｎまたは／およびＳｎの酸化物
または金属などの導電性を有してもよい。Furthermore, the transparent film may have conductivity such as an oxide or metal of In and/or Sn.
また、前記透明膜が５ｉ０２ 、 ＳｉＣ，Ｓｉ３Ｎ４
、ＢＮなどの絶縁膜をＩｎまたは／およびＳｎの酸化物
膜で挾持してもよいことは明らである。この場合、アモ
ルファス光起電力素子と半導体光起電力素子を並列に使
用することが可能となるため自由度を広げることができ
る。Further, the transparent film may be 5i02, SiC, Si3N4
It is clear that an insulating film such as , BN, etc. may be sandwiched between In and/or Sn oxide films. In this case, it becomes possible to use the amorphous photovoltaic element and the semiconductor photovoltaic element in parallel, so the degree of freedom can be expanded.
さらに、アモルファス光起電力素子が、アモルファス・
シリコン光起電力素子およびＳ】とＧｅまたはＳｉとＳ
ｎ 、またはＳｉとＰｂなとのアモルファス・シリコン
合金光起電力素子を光学的かつ電気的に直列Ｖて接続構
成してなるものであっても同様の効果が得られる。Furthermore, amorphous photovoltaic elements
Silicon photovoltaic element and S] and Ge or Si and S
Similar effects can be obtained even if the photovoltaic elements are formed by optically and electrically connecting amorphous silicon alloy photovoltaic elements such as n or Si and Pb in series V.
また、本発明による一実施例では光入射側からａ−３ｉ
（７）ｎ層、ｉ層およびｐ層さらにｃ −Ｓ ｉのｎ層
お工びｐ層の構成としたが、光入射側からａ−３ｉＱｐ
層、１層およびｎ層さらにｃ−５ｉのｐ層およびｎ層の
構成でも構わないことは言うまでもない０
以上詳細に説明した如く、本発明により、光を有効に電
気に変換する光起電力素子を得ることができる。Further, in one embodiment according to the present invention, a-3i
(7) The n-layer, i-layer, and p-layer are composed of c-Si n-layer and p-layer, but from the light incident side, a-3iQp
It goes without saying that a structure of a layer, a single layer, an n layer, or a c-5i p layer and an n layer may be used.As explained in detail above, the present invention provides a photovoltaic element that effectively converts light into electricity. can be obtained.
第１図は従来の光起電力素子の構造図（Ａ）およびエネ
ルギー・バンド図（Ｂ）であり、第２図は従来の他の光
起電力素子の構造図（８）およびエネルギー・バンド図
（Ｂ）であり、第３図は本発明による光起電力素子の一
実施例である。
１− ａ −５ｉ光起電力素子ｎ層
２ ａ−５ｉ光起電力素子１層
３ ａ−５ｉ光起電力素子ｐ層
４・・・光
５・・短波長光
６・・・長波長光
７ ・ｃ −Ｓ ｉ光起電力素子ｎ層
８・ｃ−５ｉ光光起電力素子層
９ 伝導帯下端
１０− ａ−５ｉ光起電力素子
１１・ ｃ−５ｉ光起電力素子Figure 1 is a structural diagram (A) and energy band diagram (B) of a conventional photovoltaic element, and Figure 2 is a structural diagram (8) and energy band diagram of another conventional photovoltaic element. (B), and FIG. 3 is an embodiment of the photovoltaic device according to the present invention. 1- a-5i photovoltaic element n layer 2 a-5i photovoltaic element 1 layer 3 a-5i photovoltaic element p layer 4...light 5...short wavelength light 6...long wavelength light 7・c-Si photovoltaic element n layer 8 ・c-5i photovoltaic element layer 9 Lower end of conduction band 10 - a-5i photovoltaic element 11 ・c-5i photovoltaic element
Claims (7)
リコンよりエネルギー・ギャップの小さい半導体光起電
力素子を光学的に直列に接続構成したことを特徴とする
光起電力素子。(1) A photovoltaic device characterized in that an amorphous photovoltaic device and a semiconductor photovoltaic device having a smaller energy gap than amorphous silicon are optically connected in series.
ｎＡｓ、結晶ＩｎＳｂ 、結晶ＣｄＴｅ 、結晶ＰｂＴ
ｅ 、結晶Ｃｕ２Ｓ から選ばれた結晶半導体光起電
力素子であることを特徴とする特許請求の範囲第１項記
載の光起電力素子。(2) The semiconductor photovoltaic element is crystalline Si or crystalline Ge. Crystal GaAs, Crystal GaSb, Crystal 1nP, Crystal I
nAs, crystalline InSb, crystalline CdTe, crystalline PbT
2. The photovoltaic device according to claim 1, wherein the photovoltaic device is a crystalline semiconductor photovoltaic device selected from crystalline Cu2S.
起電力素子との間に、透明膜を設けることを特徴とする
特許請求の範囲第１項および第２項記載の光起電力素子
。(3) The photovoltaic device according to claims 1 and 2, characterized in that a transparent film is provided between the amorphous photovoltaic device and the semiconductor photovoltaic device.
たは金属などの導電性を有することを特徴とする特許請
求の範囲第３項記載の光起電力素子。(4) The photovoltaic device according to claim 3, wherein the transparent film is made of an oxide or metal of In and/or Sn and has conductivity.
４ 、 ＢＮなどの絶縁膜をＩｎまたメンおよびＳｎの
酸化物膜で挾持してなることを特徴とする特許請求の範
囲第３項記載の光起電力素子。(5) The transparent film is made of 5i02, SiC, Si3N
4. The photovoltaic device according to claim 3, characterized in that an insulating film such as BN is sandwiched between oxide films of In, Men, and Sn.
・シリコン光起電力素子であることを特徴とする特許請
求の範囲第１項、第２項、第３項、第４項および第５項
記載の光起電力素子。(6) Claims 1, 2, 3, 4, and 5, wherein the amorphous photovoltaic device is an amorphous silicon photovoltaic device. Photovoltaic element.
・シリコン光起電力素子およびＳｉとＧｅまたはＳｉと
ＳｎまたはＳｉとＰｂなどのアモルファス・シリコン合
金光起電力素子を光学的かつ電気的に直列に接続構成し
てなることを特徴とする特許請求の範囲第１項、第１２
項、第３項、第４項および第５項記載の光起電力素子。(7) The amorphous photovoltaic device optically and electrically connects an amorphous silicon photovoltaic device and an amorphous silicon alloy photovoltaic device such as Si and Ge, Si and Sn, or Si and Pb in series. Claims 1 and 12 are characterized in that:
3. The photovoltaic device according to item 3, item 4, and item 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57207395A JPS5996777A (en) | 1982-11-25 | 1982-11-25 | Photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57207395A JPS5996777A (en) | 1982-11-25 | 1982-11-25 | Photovoltaic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5996777A true JPS5996777A (en) | 1984-06-04 |
Family
ID=16539025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57207395A Pending JPS5996777A (en) | 1982-11-25 | 1982-11-25 | Photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5996777A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6220380A (en) * | 1985-07-19 | 1987-01-28 | Shizuoka Univ | Photoelectric conversion device using amorphous silicon |
| JPS63152177A (en) * | 1986-12-17 | 1988-06-24 | Fuji Electric Co Ltd | Manufacture of solar cell |
| JPS6477181A (en) * | 1987-06-19 | 1989-03-23 | Toa Nenryo Kogyo Kk | Multilayer-structured solar battery |
| JPH01290267A (en) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | Manufacture of photoelectric conversion element |
| US5021100A (en) * | 1989-03-10 | 1991-06-04 | Mitsubishi Denki Kabushiki Kaisha | Tandem solar cell |
| US9559235B2 (en) | 2010-12-17 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
-
1982
- 1982-11-25 JP JP57207395A patent/JPS5996777A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6220380A (en) * | 1985-07-19 | 1987-01-28 | Shizuoka Univ | Photoelectric conversion device using amorphous silicon |
| JPS63152177A (en) * | 1986-12-17 | 1988-06-24 | Fuji Electric Co Ltd | Manufacture of solar cell |
| JPS6477181A (en) * | 1987-06-19 | 1989-03-23 | Toa Nenryo Kogyo Kk | Multilayer-structured solar battery |
| JPH01290267A (en) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | Manufacture of photoelectric conversion element |
| US5021100A (en) * | 1989-03-10 | 1991-06-04 | Mitsubishi Denki Kabushiki Kaisha | Tandem solar cell |
| US9559235B2 (en) | 2010-12-17 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
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